NTR4501N ON Semiconductor, NTR4501N Datasheet - Page 2

• Manufacturer Part Number: NTR4501N
• Description: Power Mosfet 20 V, 3.2 A, Single Nchannel, Sot23
• Manufacturer: ON Semiconductor

3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
Electrical Characteristics
OFF CHARACTERISTICS
ON CHARACTERISTICS
CHARGES AND CAPACITANCES
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage (Note 3)
Negative Threshold
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Temperature Coefficient
Temperature Coefficient
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
(BR)DSS
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
Q
DS(on)
C
V
C
g
d(on)
d(off)
DSS
GSS
t
RR
t
t
FS
oss
t
t
SD
rss
GS
GD
RR
iss
a
b
r
f
/T
http://onsemi.com
/T
J
J
V
V
V
V
V
V
V
V
V
V
V
GS
GS
I
V
DS
GS
GS
GS
D
DS
GS
GS
GS
DS
GS
2
d
= 3.6 A, R
Test Condition
= 4.5 V, V
= 4.5 V, V
= 16 V
IS
= 0 V, f = 1.0 MHz,
= 0 V
= 0 V, V
= V
= 0 V, I
= 4.5 V, I
= 2.5 V, I
= 5.0 V, I
= 0 V, I
/d
V
V
I
I
DS
D
S
t
GS
DS
= 100 A/ms,
= 1.6 A
= 3.6 A
, I
= 10 V
= 0 V,
D
GS
D
SD
G
DS
DS
= 250 mA
D
D
D
= 250 mA
T
T
= 6.0 W
= ±12 V
= 1.6 A
= 3.6 A
= 3.6 A
= 3.1 A
J
J
= 10 V,
= 10 V,
= 25°C
= 85°C
0.65
Min
20
24.5
−2.3
Typ
200
2.4
0.5
0.6
6.5
0.8
7.1
1.9
3.0
22
70
88
80
50
12
12
9
3
5
±100
Max
105
1.5
1.2
6.0
1.2
10
80
13
24
24
6
mV/°C
mV/°C
Units
mW
nA
nC
nC
mA
mA
pF
ns
ns
V
V
S
V