VN2224 Supertex, Inc., VN2224 Datasheet

VN2224

Manufacturer Part Number

VN2224

Description

N-channel Enhancement-mode Vertical Dmos Fets

Manufacturer

Supertex, Inc.

Datasheet

1.VN2224.pdf (5 pages)

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Ampliﬁers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VN2224

Device

ISS

and fast switching speeds

N-Channel Enhancement-Mode

Vertical DMOS FETs

Package Option

VN2224N3-G

TO-92

-55°C to +150°C

+300°C

Value

±20V

DGS

DSS

Product Marking

General Description

The Supertex VN2224 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁguration

DSS

240

(V)

/BV

Y Y W W

2224

DGS

YY = Year Sealed

WW = Week Sealed

DRAIN

TO-92 (N3)

(max)

1.25

DS(ON)

(Ω)

= “Green” Packaging

SOURCE

GATE

VN2224

(min)

D(ON)

5.0

(A)

Related parts for VN2224

VN2224 Summary of contents

Page 1

... Distance of 1.6mm from case for 10 seconds. N-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VN2224 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefﬁ ...

Page 2

... V = 25V 350 V = 0V, GS 150 25V 1.0MHz 25V 2.0A 10Ω GEN PULSE OUTPUT R GEN D.U.T. INPUT VN2224 I DRM (A) 5.0 = 5.0mA = 5.0mA = Max Rating 25V DS = 25V = 2.0A = 2.0A = 2.0A = 2.0A = 1.0A = 100mA ...

Page 3

... Saturation Characteristics 10V (volts) DS Power Dissipation vs. Case Temperature 10 5 TO- 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 25° 0.001 0.01 0 (seconds) p VN2224 8V 10 150 10 ...

Page 4

... RSS On-Resistance vs. Drain Current 10V (amperes and R Variation with Temperature (th 5mA R @ 10V 100 Ο j Gate Drive Dynamic Characteristics V = 10V 40V DS 733 pF 300 (nanocoulombs) G VN2224 10 2.4 2.0 1.6 1.2 0.8 0.4 150 10 ...

Page 5

... NOM - (inches) MAX .210 Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D061608. (The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN2224 A070108 ...

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