NDF10N60Z ON Semiconductor, NDF10N60Z Datasheet - Page 4

• Manufacturer Part Number: NDF10N60Z
• Description: N-channel Power Mosfet 0.65 , 600 Volts
• Manufacturer: ON Semiconductor

3500
3000
2500
2000
1500
1000
1000
500
100
10
0
0
1
Figure 9. Resistive Switching Time Variation
V
I
V
D
DD
GS
C
= 10 A
25
rss
V
= 300 V
= 10 V
C
C
DS
Figure 7. Capacitance Variation
oss
iss
, DRAIN−TO−SOURCE VOLTAGE (V)
50
R
G
vs. Gate Resistance
, GATE RESISTANCE (W)
75
0.01
100
100
0.1
10
10
1
1
R
Thermal Limit
Package Limit
125
V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
DS(on)
C
GS
= 25°C
Safe Operating Area for NDF10N60Z
= 10 V
V
DS
TYPICAL CHARACTERISTICS
150
V
T
Limit
J
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
= 25°C
= 0 V
175
http://onsemi.com
10
t
t
t
t
d(off)
d(on)
r
f
200
100
4
1 ms
20
15
10
5
0
0
Q
10
100 ms
100
8
6
4
2
0
gs
5
0.4
V
10
DS
Drain−to−Source Voltage vs. Total Charge
V
T
GS
J
Figure 10. Diode Source Current vs.
10 ms
= 25°C
V
0.5
15
10 ms
Q
SD
= 0 V
dc
g
Figure 8. Gate−to−Source and
, SOURCE−TO−DRAIN VOLTAGE (V)
, TOTAL GATE CHARGE (nC)
20
Q
gd
1000
0.6
QT
25
Forward Voltage
Mounted on 2″ sq. FR4
board (1″ sq. 2 oz. Cu 0.06″
thick single sided) with one
die operating
30
0.7
35
40
V
0.8
GS
I
T
D
45
J
= 10 A
= 25°C
50 55
0.9
400
300
200
100
0
1.0