NE680M03 Renesas Electronics Corporation., NE680M03 Datasheet

NE680M03

Manufacturer Part Number

NE680M03

Description

Npn Silicon Transistor

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.NE680M03.pdf (3 pages)

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Download datasheet (32Kb)

FEATURES

DESCRIPTION

The NE680M03 transistor is designed for low noise, high gain,

and low cost applications. This high f

voltage/low current applications. NEC's new low profile/flat

lead style "M03" package is ideal for today's portable wireless

applications. The NE680 is also available in chip, Micro-x, and

six different low cost plastic surface mount package styles.

ELECTRICAL CHARACTERISTICS

• NEW M03 PACKAGE:

• HIGH GAIN BANDWIDTH PRODUCT:

• LOW NOISE FIGURE:

Notes:

SYMBOLS

• Smallest transistor outline package available

• Low profile/0.59 mm package height

• Flat lead style for better RF performance

NF = 1.9 dB at 2 GHz

= 8 GHz

CBO

EBO

21E

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.

3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.

FE 2

RE 3

Gain Bandwidth at V

Noise Figure at V

Insertion Power Gain at V

Forward Current Gain at V

Collector Cutoff Current at V

Emitter Cutoff Current at V

Feedback Capacitance at V

PARAMETERS AND CONDITIONS

= 3 V, I

EIAJ

NPN SILICON TRANSISTOR

= 3 V, I

part is ideal for low

PRELIMINARY DATA SHEET

PACKAGE OUTLINE

REGISTERED NUMBER

PART NUMBER

= 3 V, I

= 6 mA, f = 2 GHz

= 3 V, I

= 1 V, I

= 3 V, I

= 10 V, I

= 5 mA, f = 2 GHz

= 25°C)

= 5 mA

= 0

= 0, f = 1 MHz

= 0

Note:

1. This dimension was changed

Example of Lot No. Identification

OUTLINE DIMENSIONS

0 6 xxxxxxx

effective 04/2000 from 1.4 mm

to 1.2 mm. Products with "04" or

a higher number indicated for

month of manufacture in lot

numbers have the new dimension.

1.4 ±0.1

California Eastern Laboratories

Year of manufacture

(Last digit of year, 2000 = 0)

(0.9)

In-company control code

Month of manufacture

(Example: Jan. = 1, Feb. = 2, etc.

Oct. = X, Nov. = Y, Dec. = Z)

0.59±0.05

UNITS

0.45

GHz

µA

0.2±0.1

PACKAGE OUTLINE M03

1.2±0.05

0.8±0.1

MIN

5.5

NE680M03

(Units in mm)

NE680M03

2SC5434

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

M03

TYP

8.0

1.9

7.5

0.3

0.3±0.1

0.15

-0.05

+0.1

MAX

145

3.2

1.0

0.7

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NE680M03 Summary of contents

Page 1

... T • LOW NOISE FIGURE 1 GHz DESCRIPTION The NE680M03 transistor is designed for low noise, high gain, and low cost applications. This high f voltage/low current applications. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications. The NE680 is also available in chip, Micro-x, and six different low cost plastic surface mount package styles ...

Page 2

NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 5.98e-16 MJC BF 179 XCJC NF 1.04 CJS VAF 17 VJS IKF 0.02 MJS ISE 1.0e XTF NR 1.04 VTF VAR 100 ...

Page 3

... A UNITS RATINGS 1 125 150 °C °C -65 to +150 (T = 25° (V) CE NE680M03 FORWARD CURRENT GAIN vs. COLECTOR CURRENT 500 300 200 100 Collector Current, I (mA) C Internet: http://WWW.CEL.COM ...

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