NE856M23 Renesas Electronics Corporation., NE856M23 Datasheet
NE856M23
Manufacturer Part Number
NE856M23
Description
Npn Silicon Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.NE856M23.pdf
(2 pages)
ELECTRICAL CHARACTERISTICS
FEATURES
The NE856M23 transistor is designed for low cost amplifier
and oscillator applications. Low noise figure, high gain and high
current capability equate to wide dynamic range and excellent
linearity. NEC's new low profile/ceramic substrate style "M23"
package is ideal for today's portable wireless applications. The
NE856 is also available in chip, Micro-x, and eight different low
cost plastic surface mount package styles.
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
• NEW MINIATURE M23 PACKAGE:
• LOW NOISE FIGURE:
• HIGH COLLECTOR CURRENT:
DESCRIPTION
SYMBOLS
– World's smallest transistor package footprint —
– Low profile/0.55 mm package height
– Ceramic substrate for better RF performance
NF = 1.4 dB at 1 GHz
I
C
|S
leads are completely underneath package body
C
MAX = 100 mA
h
I
I
NF
CBO
EBO
21E
f
FE 2
RE 3
T
|
2
Gain Bandwidth at V
Noise Figure at V
Insertion Power Gain at V
Forward Current Gain at V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Feedback Capacitance at V
CE
350 s, duty cycle
PARAMETERS AND CONDITIONS
= 3 V, I
CE
EIAJ
NPN SILICON TRANSISTOR
= 3 V, I
PRELIMINARY DATA SHEET
CE
1
PACKAGE OUTLINE
CE
EB
REGISTERED NUMBER
C
CB
CB
PART NUMBER
= 3 V, I
= 7 mA, f = 1 GHz
= 3 V, I
= 1 V, I
C
= 3 V, I
= 10 V, I
= 7 mA, f = 1 GHz
(T
C
A
C
C
= 7 mA, f = 1 GHz
E
= 25 C)
= 7 mA
= 0
2 %.
= 0, f = 1 MHz
E
= 0
OUTLINE DIMENSIONS
California Eastern Laboratories
UNITS
GHz
dB
dB
pF
A
A
PACKAGE OUTLINE M23
0.6
MIN
80
3
7
0.15
NE856M23
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
(Units in mm)
2
BOTTOM VIEW
NE856M23
2SC5649
M23
TYP
10.0
0.2
0.5
1
4.5
1.4
0.7
3
0.15
0.25
0.25
0.4
MAX
145
2.5
1.5
1
1
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NE856M23 Summary of contents
Page 1
... I MAX = 100 mA C DESCRIPTION The NE856M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications. The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles ...
Page 2
ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Collector to Base Voltage CBO V Collector to Emitter Voltage CEO V Emitter to Base Voltage EBO I Collector Current C P Total Power Dissipation T T Junction Temperature J T Storage Temperature STG ...