EMH2601 Sanyo Semiconductor Corporation, EMH2601 Datasheet - Page 5

• Manufacturer Part Number: EMH2601
• Description: N-channel And P-channel Silicon Mosfets
• Manufacturer: Sanyo Semiconductor Corporation

1000
0.01
100
100
1.0
0.1
10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
10
0.01
0.01
5
3
2
7
5
3
2
7
5
7
5
3
2
7
5
3
2
0
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
V DS =10V
I D =3A
2 3
0.5
2
Operation in this
area is limited by R DS (on).
3
1.0
5 7
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Drain-to-Source Voltage, V DS -- V
5 7
5
Total Gate Charge, Qg -- nC
0.1
1.5
Drain Current, I D -- A
SW Time -- I D
0.1
2 3
V GS -- Qg
2.0
A S O
2
5 7
Ciss
2.5
10
3
1.0
3.0
5 7
2
2 3
0.8mm) 1unit
3.5
1.0
5
15
7
4.0
V DD =10V
V GS =4V
2
10
f=1MHz
3
10 s
4.5
2
IT10409
IT10410
IT10411
IT10412
[Nch]
[Nch]
[Nch]
[Nch]
3
5 7
5.0
20
EMH2601
5
--0.01
1000
--1.0
--0.1
100
100
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
--10
10
--0.01
--0.01
5
3
2
7
5
3
2
7
5
3
7
5
3
3
2
7
5
3
2
0
2
7
5
3
2
7
5
3
2
7
5
3
2
0
0
Ta=25 C
Single pulse
Mounted on a ceramic board (900mm
V DS = --10V
I D = --2A
I DP = --8A
0.5
2 3
2
3
1.0
Ciss, Coss, Crss -- V DS
Drain-to-Source Voltage, V DS -- V
Operation in this area
is limited by R DS (on).
5 7 --0.1
Drain-to-Source Voltage, V DS -- V
--5
Total Gate Charge, Qg -- nC
5
1.5
t d (on)
Drain Current, I D -- A
7
SW Time -- I D
--0.1
V GS -- Qg
2 3
2.0
A S O
2
--10
2.5
5 7
3
--1.0
3.0
5
2
2 3
7
3.5
0.8mm) 1unit
--1.0
--15
V DD = --10V
V GS = --4V
5 7 --10
4.0
No.8731-5/6
f=1MHz
2 2
4.5
IT10544
IT10545
IT10546
IT10547
[Pch]
3
[Pch]
[Pch]
[Pch]
2
--20
5.0
5
3