NUS6189MN ON Semiconductor, NUS6189MN Datasheet - Page 6

• Manufacturer Part Number: NUS6189MN
• Description: Low Profile Overvoltage Protection Ic With Integrated Mosfet
• Manufacturer: ON Semiconductor

5. Guaranteed by design.
6. Pulsed Condition: Pulse Width = 300 us, Duty Cycle < 2%.
CHARGING FET (MOSFET1) (T
ELECTRICAL CHARACTERISTICS
Input Capacitance (V
Output Capacitance (V
Voltage Drop Across FET
On Resistance
Off State Leakage Current (Note 5)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 5)
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Forward Transconductance (V
Gate Threshold Voltage (V
Negative Threshold Temperature Coefficient
V
V
V
T
V
V
V
J
GS
GS
GS
GS
GS
GS
= 125°C
= -4.5 V, I
= -2.5 V, I
= -4.5 V, I
= -4.5 V, I
= -2.5 V, I
= -4.5 V, I
Load
Load
Load
Load
Load
Load
= 1.0 A
= 1.0 A
= 1.0 A, T
= 1.0 A
= 1.0 A
= 1.0 A, T
EB
CB
= -0.5 V, f = 1.0 MHz, Note 5)
= -3.0 V, f = 1.0 MHz, Note 5)
GS
= V
J
DS
J
J
Characteristic
= 150°C, (Note 5)
= 25°C, unless otherwise specified)
= 150°C (Note 5)
DS
= -6 V, I
, I
D
= -250 mA)
D
(T
= 1.0 A)
J
= 25°C, CNTRL ≤ 1.5 V, V
http://onsemi.com
6
CC
= 6.0 V, unless otherwise specified)
V
Symbol
Q
R
Q
V
GS(th)
C
C
C
I
C
G(TOT)
Q
Q
C
V
DS(on)
GS(th)
Leak
G(TH)
R
g
OSS
RSS
obo
ISS
DS
GD
ibo
GS
fs
G
/T
J
−0.45
Min
–
–
–
–
–
–
−
−
–
–
–
–
–
–
–
–
–
–
–
–
−0.67
1330
−0.1
14.4
Typ
240
200
115
1.5
2.2
2.9
0.9
2.7
50
32
44
62
32
44
62
13
–
Max
−1.0
15.7
−1.1
400
100
−10
40
50
70
40
50
70
–
–
–
–
–
–
–
–
–
Unit
mV/
mV
mV
nC
nC
nC
nC
pF
pF
mA
pF
pF
pF
°C
W
S
V