NUS6189MN ON Semiconductor, NUS6189MN Datasheet - Page 7

• Manufacturer Part Number: NUS6189MN
• Description: Low Profile Overvoltage Protection Ic With Integrated Mosfet
• Manufacturer: ON Semiconductor

0.05
0.04
0.03
0.02
1.6
1.4
1.2
1.0
0.8
0.6
6
5
4
3
2
1
0
−50
0
1
TYPICAL CHARACTERISTICS − 12V, P−CHANNEL MOSFETS (MOSFET1 − CHARGING)
Figure 5. On−Resistance vs. Drain Current
V
I
V
GS
D
Figure 7. On−Resistance Variation with
−25
GS
Figure 3. On−Region Characteristics
−V
= −3 A
= 4.5 V
1
= −4.5 V
DS
T
2
J
−1.7 − −8.0 V
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
−I
D
2
, DRAIN CURRENT (A)
Temperature
25
3
T
T
T
J
J
J
3
50
= 100°C
= −55°C
= 25°C
4
75
4
100
T
V
J
GS
= 25°C
5
5
= −1.4 V
−1.6 V
−1.5 V
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125
6
6
150
7
10,000
1,000
0.05
0.04
0.03
0.02
100
6
5
4
3
2
1
0
0.5
2
1
Figure 6. On−Resistance vs. Drain Current and
Figure 8. Drain−to−Source Leakage Current
V
T
DS
J
V
= 25°C
GS
−V
−V
≥ −10 V
Figure 4. Transfer Characteristics
DS
GS
= 0 V
2
4
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
−I
D
1.0
, DRAIN CURRENT (A)
T
Gate Voltage
J
vs. Voltage
6
3
= 100°C
T
V
V
J
GS
GS
= 25°C
T
T
= −2.5 V
= −4.5 V
J
J
= 150°C
= 100°C
4
8
T
1.5
J
= −55°C
10
5
2.0
12
6