NUS6189MN ON Semiconductor, NUS6189MN Datasheet - Page 7
NUS6189MN
Manufacturer Part Number
NUS6189MN
Description
Low Profile Overvoltage Protection Ic With Integrated Mosfet
Manufacturer
ON Semiconductor
Datasheet
1.NUS6189MN.pdf
(14 pages)
0.05
0.04
0.03
0.02
1.6
1.4
1.2
1.0
0.8
0.6
6
5
4
3
2
1
0
−50
0
1
TYPICAL CHARACTERISTICS − 12V, P−CHANNEL MOSFETS (MOSFET1 − CHARGING)
Figure 5. On−Resistance vs. Drain Current
V
I
V
GS
D
Figure 7. On−Resistance Variation with
−25
GS
Figure 3. On−Region Characteristics
−V
= −3 A
= 4.5 V
1
= −4.5 V
DS
T
2
J
−1.7 − −8.0 V
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
−I
D
2
, DRAIN CURRENT (A)
Temperature
25
3
T
T
T
J
J
J
3
50
= 100°C
= −55°C
= 25°C
4
75
4
100
T
V
J
GS
= 25°C
5
5
= −1.4 V
−1.6 V
−1.5 V
http://onsemi.com
125
6
6
150
7
10,000
1,000
0.05
0.04
0.03
0.02
100
6
5
4
3
2
1
0
0.5
2
1
Figure 6. On−Resistance vs. Drain Current and
Figure 8. Drain−to−Source Leakage Current
V
T
DS
J
V
= 25°C
GS
−V
−V
≥ −10 V
Figure 4. Transfer Characteristics
DS
GS
= 0 V
2
4
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
−I
D
1.0
, DRAIN CURRENT (A)
T
Gate Voltage
J
vs. Voltage
6
3
= 100°C
T
V
V
J
GS
GS
= 25°C
T
T
= −2.5 V
= −4.5 V
J
J
= 150°C
= 100°C
4
8
T
1.5
J
= −55°C
10
5
2.0
12
6