NUS6189MN ON Semiconductor, NUS6189MN Datasheet - Page 8

• Manufacturer Part Number: NUS6189MN
• Description: Low Profile Overvoltage Protection Ic With Integrated Mosfet
• Manufacturer: ON Semiconductor

1,000
2800
2400
2000
1600
1200
800
400
100
10
0
1
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
−4
1
C
C
Figure 11. Resistive Switching Time Variation
V
I
V
iss
rss
V
D
TYPICAL CHARACTERISTICS − 12V, P−CHANNEL MOSFETS (MOSFET1 − CHARGING)
DD
GS
DS
= −3.0 A
−2
= −12 V
= −4.5 V
−V
= 0 V
Figure 9. Capacitance Variation
GS
0
R
−V
V
G
C
vs. Gate Resistance
, GATE RESISTANCE (W)
GS
oss
DS
= 0 V
2
0.01
100
10
0.1
4
10
1
t
t
d(off)
d(on)
0.1
t
t
f
r
Single Pulse
Figure 13. Maximum Rated Forward Biased
T
6
C
= 25°C
−V
DS
8
, DRAIN−TO−SOURCE VOLTAGE (V)
C
T
iss
R
Thermal Limit
Package Limit
J
DS(on)
Safe Operating Area
= 25°C
10
http://onsemi.com
1
Limit
100
12
8
5
4
3
2
1
0
6
0.01
0
0.1
10
V
Q
1
10
DS
Drain−to−Source Voltage vs. Total Charge
gs
0
Figure 12. Diode Forward Voltage vs. Current
1 ms
10 ms
100 ms
2
dc
V
GS
Figure 10. Gate−to−Source and
−V
Q
= 0 V
Q
g
SD
0.2
, TOTAL GATE CHARGE (nC)
gd
4
, SOURCE−TO−DRAIN VOLTAGE (V)
T
J
= 150°C
100
6
Mounted on 2″ sq.
FR4 board (0.5″ sq.
2 oz. Cu single
sided) with MOSFET
die operating.
0.4
Q
T
8
0.6
10
V
GS
I
T
T
D
J
J
T
= −3 A
= 25°C
= 25°C
J
12
= −55°C
0.8
14
12
10
8
6
4
2
0
1.0