NUS6189MN ON Semiconductor, NUS6189MN Datasheet
NUS6189MN
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NUS6189MN Summary of contents
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... QFN22 ALYWG CASE 485AT G NUS6189 = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION † Device Package Shipping QFN22 3000 / Tape & Reel (Pb−Free) Publication Order Number: NUS6189MN/D ...
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Source1 Batt Base Collector Collector Collector Collector 6 7 Source2 MOSFET2 12 Adapter Input OVP GND 19 Blocks Integrated in NUS6189 Figure 2. Typical Charging Solution for Qualcomm QSC60xx 18 17 ...
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FUNCTIONAL PIN DESCRIPTIONS Pin Function 1 Source 1 This pin is the source of MOSFET1 and connects to the more negative Vsense pin of the PMIC and to the more negative side of the current sense resistor. 2, 16, 17, ...
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MAXIMUM RATINGS Rating V to Ground IN Gate2 Voltage to Ground Control Pin to Ground Shunt Voltage (OVP to Batt) OUT Maximum Power Dissipation (T = 50°C, Notes 1 & Thermal Resistance, Junction-to-Air (Note 1) Average q for ...
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ELECTRICAL CHARACTERISTICS Characteristic OVP THRESHOLD Input Threshold (V Increasing) IN Input Hysteresis (V Decreasing) IN Input Impedance ( CONTROL INPUT Control Voltage High (Output On) Control Voltage Low (Output Off) Control Current High (V = ...
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ELECTRICAL CHARACTERISTICS Characteristic Input Capacitance ( 1.0 MHz, Note 5) EB Output Capacitance ( 1.0 MHz, Note 5) CB CHARGING FET (MOSFET1 25°C, unless otherwise specified) J Voltage ...
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TYPICAL CHARACTERISTICS − 12V, P−CHANNEL MOSFETS (MOSFET1 − CHARGING) −1.7 − −8 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 3. On−Region Characteristics 0. 4 ...
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TYPICAL CHARACTERISTICS − 12V, P−CHANNEL MOSFETS (MOSFET1 − CHARGING) 2800 2400 C iss 2000 1600 1200 C rss 800 C oss 400 0 −4 − −V −V ...
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TYPICAL CHARACTERISTICS − 12V, P−CHANNEL MOSFETS (MOSFET1 − CHARGING 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 t, TIME (s) Figure 14. FET Thermal Response http://onsemi.com 9 1E+00 ...
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TYPICAL CHARACTERISTICS − SINGLE PNP TRANSISTOR (BJT − CHARGING) 0.25 V CE(sat) IC/ 0.2 0.15 0.1 0.05 0 0.001 0.01 0 COLLECTOR CURRENT (A) C Figure 15. Collector Emitter Saturation Voltage vs. Collector Current 800 750 ...
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TYPICAL CHARACTERISTICS − SINGLE PNP TRANSISTOR (BJT − CHARGING) 350 325 300 275 250 225 200 175 150 125 0 1.0 2.0 3.0 4 EMITTER BASE VOLTAGE (V) EB Figure 21. Input Capacitance 10 1.0 0.1 0.01 0.01 ...
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TYPICAL PERFORMANCE CURVES − OVERVOLTAGE PROTECTION IC 7.05 7.00 6.95 6.90 6.85 6.80 6.75 6.70 −40 −25 − Ambient Temperature (°C) Figure 24. Typical V Threshold Variation vs. th Temperature 100 ...
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TYPICAL PERFORMANCE CURVES − 30V, P−CHANNEL MOSFET (MOSFET2 − OVP) 12 −4.2 V −10V −4 − − −5 − 25° ...
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... L 0.30 0.325 0.35 L1 −−− −−− 0.15 G 1.35 1.40 1.50 G1 0.95 1.05 1.15 G2 0.855 0.885 0.915 SOLDERING FOOTPRINT* 3.30 1.55 0.50 0.925 PITCH PACKAGE OUTLINE 1 1.21 1.47 4.30 1.47 1.47 22X 0.39 0.52 1.14 0.30 22X DIMENSIONS: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NUS6189MN/D 1.58 ...