MJ21196 ON Semiconductor, MJ21196 Datasheet - Page 2

• Manufacturer Part Number: MJ21196
• Description: Complementary Silicon Power Transistors
• Manufacturer: ON Semiconductor

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
SECOND BREAKDOWN
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector Cutoff Current
Second Breakdown Collector Current with Base Forward Biased
DC Current Gain
Base−Emitter On Voltage
Collector−Emitter Saturation Voltage
Total Harmonic Distortion at the Output
Current Gain Bandwidth Product
Output Capacitance
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
(I
(V
(V
(V
(V
(V
(I
(I
(I
(I
(I
V
(Matched pair h
(I
(V
Figure 1. Typical Current Gain Bandwidth Product
C
C
C
C
C
C
C
0.1
RMS
CE
CE
CE
CE
CE
CB
= 100 mAdc, I
= 8 Adc, V
= 16 Adc, V
= 8 Adc, V
= 8 Adc, I
= 16 Adc, I
= 1 Adc, V
T
f
test
J
= 200 Vdc, I
= 5 Vdc, I
= 250 Vdc, V
= 50 Vdc, t = 1 s (non−repetitive)
= 80 Vdc, t = 1 s (non−repetitive)
= 10 Vdc, I
= 25°C
= 28.3 V, f = 1 kHz, P
= 1 MHz
V
CE
B
CE
CE
CE
B
= 10 V
= 0.8 Adc)
C
CE
I
FE
C
= 3.2 Adc)
E
, COLLECTOR CURRENT (AMPS)
= 0)
= 5 Vdc)
= 5 Vdc)
= 10 Vdc, f
5 V
B
B
= 0, f
= 5 Vdc)
BE(off)
= 50 @ 5 A/5 V)
= 0)
= 0)
PNP MJ21195
test
= 1.5 Vdc)
= 1 MHz)
Characteristic
LOAD
test
1.0
= 1 MHz)
= 100 W
MJ21195 − PNP
(T
C
RMS
= 25°C ± 5°C unless otherwise noted)
h
unmatched
h
matched
FE
FE
http://onsemi.com
10
2
MJ21196 − NPN
7.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
7.5
6.5
6.0
Figure 2. Typical Current Gain Bandwidth Product
0.1
V
Symbol
T
f
V
V
test
CEO(sus)
J
CE(sat)
I
I
I
BE(on)
T
I
h
C
CEO
EBO
CEX
= 25°C
S/b
f
FE
HD
= 1 MHz
T
ob
I
C
, COLLECTOR CURRENT (AMPS)
Min
250
2.5
25
NPN MJ21196
−
−
−
5
8
−
−
−
−
−
4
−
Typical
0.08
1.0
0.8
−
−
−
−
−
−
−
−
−
−
−
−
−
V
CE
= 5 V
Max
100
100
100
500
2.2
1.4
75
10 V
−
−
−
4
−
−
−
mAdc
mAdc
mAdc
Unit
MHz
Vdc
Adc
Vdc
Vdc
pF
%
−
10