MJ21196 ON Semiconductor, MJ21196 Datasheet - Page 4

• Manufacturer Part Number: MJ21196
• Description: Complementary Silicon Power Transistors
• Manufacturer: ON Semiconductor

3.0
2.5
2.0
1.5
1.0
0.5
1.0
0.1
100
10
1.0
0.1
10
0
0.1
0.1
1.0
Figure 13. Active Region Safe Operating Area
T
I
T
C
J
J
/I
Figure 11. Typical Base−Emitter Voltage
= 25°C
= 25°C
B
Figure 9. Typical Saturation Voltages
= 10
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
I
I
C
V
C
, COLLECTOR CURRENT (AMPS)
CE
, COLLECTOR CURRENT (AMPS)
= 5 V (DASHED)
1.0
1.0
10
PNP MJ21195
PNP MJ21195
1 sec
V
BE(sat)
250 ms
10 ms
MJ21195 − PNP
10
10
100
V
V
CE
TYPICAL CHARACTERISTICS
CE(sat)
50 ms
= 20 V (SOLID)
http://onsemi.com
100
1000
100
4
MJ21196 − NPN
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.1
10
ability of a transistor; average junction temperature
and secondary breakdown. Safe operating area curves
indicate I
observed for reliable operation; i.e., the transistor
must not be subjected to greater dissipation than the
curves indicate.
T
temperatures, thermal limitations will reduce the
power than can be handled to values less than the
limitations imposed by second breakdown.
0
C
0.1
0.1
There are two limitations on the power handling
The data of Figure 13 is based on T
is variable depending on conditions. At high case
T
I
T
C
J
J
/I
Figure 12. Typical Base−Emitter Voltage
= 25°C
B
= 25°C
Figure 10. Typical Saturation Voltages
= 10
C
− V
I
I
C
C
CE
, COLLECTOR CURRENT (AMPS)
, COLLECTOR CURRENT (AMPS)
1.0
limits of the transistor that must be
1.0
V
CE
NPN MJ21196
NPN MJ21196
= 5 V (DASHED)
V
BE(sat)
10
10
V
J(pk)
CE
V
CE(sat)
= 20 V (SOLID)
= 200°C;
100
100