UNR31A1G Panasonic Corporation of North America, UNR31A1G Datasheet - Page 2

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UNR31A1G

Manufacturer Part Number
UNR31A1G
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
UNR31A1G
2
−100
− 0.1
−10
120
100
250
200
150
100
80
60
40
20
−1
50
− 0.1
0
0
−1
0
Ambient temperature T
Collector current I
Output current I
40
T
−1
a
V
h
P
= 75°C
FE
IN
T
−10
 T
 I
 I
80
−25°C
25°C
C
a
O
−10
O
C
This product complies with the RoHS Directive (EU 2002/95/EC).
V
V
T
(mA)
a
CE
O
(mA)
a
= 25°C
= − 0.2 V
= −10 V
(°C)
120
−100
−100
−80
−60
−40
−20
10
0
1
0
0
Collector-emitter voltage V
T
Collector-base voltage V
a
I
= 25°C
B
−2
= −10 mA
−8
SJH00161AED
C
−4
I
C
ob
−16
 V
 V
−6
−9 mA −8 mA −7 mA
−24
CE
CB
−8
f = 1 MHz
T
a
CB
−32
−10
= 25°C
CE
−6 mA
−5 mA
−4 mA
−3 mA
−2 mA
−1 mA
(V)
(V)
−12
−40
− 0.01
− 0.1
−100
−10
−10
−1
−1
− 0.1
0
Collector current I
25°C
Input voltage V
T
a
V
= 75°C
−1
−4
CE(sat)
I
O
 V
−25°C
 I
IN
−10
−8
IN
C
C
I
C
( mA )
V
T
(V)
/ I
a
O
= 25°C
B
= −5 V
= 10
−100
−12

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