BB504M Renesas Electronics Corporation., BB504M Datasheet

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BB504M

Manufacturer Part Number
BB504M
Description
Mosfets Built In Biasing Circuit Mos Fet Ic Vhf&uhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Part Number:
BB504M
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RENESAS
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Part Number:
BB504M
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BB504M
Built in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
Features
Outline
Notes:
Rev.7.00 Aug 10, 2005 page 1 of 9
Built in Biasing Circuit; To reduce using parts cost & PC board space.
Low noise; NF = 1.0 dB typ. at f = 200 MHz, NF = 1.75 dB typ. at f =900 MHz
High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
Withstanding to ESD;
Built in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Provide mini mold packages; MPAK-4 (SOT-143Rmod)
1. Marking is “DS–”.
2. BB504M is individual type number of RENESAS BBFET.
RENESAS Package code: PLSP0004ZA-A
(Package name: MPAK-4)
3
2
4
1
(Previous ADE-208-982E)
1. Source
2. Gate1
3. Gate2
4. Drain
REJ03G0837-0700
Aug.10.2005
Rev.7.00

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BB504M Summary of contents

Page 1

... Built in ESD absorbing diode. Withstand up to 200 200 pF conditions. Provide mini mold packages; MPAK-4 (SOT-143Rmod) Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) Notes: 1. Marking is “DS–”. 2. BB504M is individual type number of RENESAS BBFET. Rev.7.00 Aug 10, 2005 page REJ03G0837-0700 (Previous ADE-208-982E Source 2 ...

Page 2

Absolute Maximum Ratings Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Electrical Characteristics Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to ...

Page 3

Test Circuits • DC Biasing Circuit for Operating Characteristics Items ( • 200 MHz Power Gain, Noise Figure Test Circuit V T 1000p 1000p 47k Input(50Ω) L1 1000p 1SV70 36p L1 : Φ1mm Enameled Copper Wire,Inside dia 10mm, ...

Page 4

MHz Power Gain, Noise Figure Test Circuit Input L1 L3: 29 Rev.7.00 Aug 10, 2005 page RFC ...

Page 5

Maximum Channel Power Dissipation Curve 200 150 100 100 Ambient Temperature Ta (°C) Drain Current vs. Gate1 Voltage Ω 120 ...

Page 6

Power Gain vs. Gate Resistance G2S f = 900 MHz 100 200 Gate Resistance R Drain ...

Page 7

S11 Parameter vs. Frequency 1.5 0 −.2 −.4 −.6 −.8 −1 Test Condition G2S Zo = 50Ω ...

Page 8

S Parameter S11 f(MHz) MAG. ANG. 50 1.000 -3.3 100 0.993 -7.2 150 0.991 -10.9 200 0.984 -15.0 250 0.978 -19.0 300 0.970 -22.8 350 0.958 -26.7 400 0.954 -30.3 450 0.945 -33.8 500 0.932 -37.5 550 0.920 -40.6 600 ...

Page 9

... A-A Section Ordering Information Part Name BB504MDS-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.7.00 Aug 10, 2005 page Package Name MASS[Typ.] MPAK-4 / MPAK-4V 0.013g ...

Page 10

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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