2MBI100U4H-170 Fuji Electric holdings CO.,Ltd, 2MBI100U4H-170 Datasheet
2MBI100U4H-170
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2MBI100U4H-170 Summary of contents
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... SPECIFICATION Device Name : Type Name : Spec. No. : S.Miyashita Jun. 01 ’05 Y.Seki T.Miyasaka Jun. 01 ’05 K.Yamada IGBT MODULE 2MBI100U4H-170 MS5F 6143 MS5F6143 H04-004-07b ...
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Classi- Date Ind. fication Enactment Jun.-01 -’05 Revised characteristics a Oct.-25-’05 Revision Revised Reliability test results b Revision May.-31 -’ Applied Content Drawn date Issued date ...
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... Outline Drawing ( Unit : Equivalent circuit 2MBI100U4H-170 MS5F6143 H04-004-03a ...
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Maximum Ratings ( at Tc= 25°C unless otherwise specified ） Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage Mounting (*2) Screw Torque Terminals (*3) (*1) ...
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... Logo of production Lot.No. 7.Applicable category This specification is applied to IGBT Module named 2MBI100U4H-170 . 8.Storage and transportation notes ・ The module should be stored at a standard temperature 35°C and humidity 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ...
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Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
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Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...
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Reliability Test Results Test cate- Test items gories 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 ...
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Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 250 VGE=20V 15V 12V 200 150 100 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 250 Tj=25°C 200 ...
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Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=4.7Ω, Tj= 25°C 10000 1000 100 100 150 Collector current : Ic [A] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=100A, VGE=±15V, Tj= 25°C 10000 1000 ton toff tr ...
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Forward current vs. Forward on voltage (typ.) chip 250 200 Tj=25°C Tj=125°C 150 100 Forward on voltage : VF [V] Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 0.100 Pulse width : Pw [sec] ...
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This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and ...
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Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. 素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。 case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE ...