6MBI100U2B-060 Fuji Electric holdings CO.,Ltd, 6MBI100U2B-060 Datasheet

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6MBI100U2B-060

Manufacturer Part Number
6MBI100U2B-060
Description
Igbt Module U Series 600v / 100a
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet

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6MBI100U2B-060
IGBT MODULE (U series)
600V / 100A
· Low V
· Compact Package
· P.C. Board Mount Module
· Inverter for Motoe Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
I
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power disspation
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage
Mounting screw torque
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Two thermistor terminals should be connected together, each other terminals should be
Absolute maximum ratings (Tc=25°C unless otherwise specified)
connected together and shorted to base plate when isolation test will be done.
Features
Applications
Maximum ratings and characteristics
CE
between thermistor and others *3
(sat)
V
V
I
I
-I
-I
P
T
T
V
Symbol
C
CP
stg
C
C
C
j
CES
GES
iso
pulse
Condition
Continuous
1ms
1 device
AC : 1 minute
Rating
-40 to +125
AC 2500
AC 2500
+150
600
±20
100
200
100
200
380
3.5 *
1
IGBT Modules
Unit
V
V
A
W
°C
°C
V
V
N·m

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6MBI100U2B-060 Summary of contents

Page 1

... IGBT MODULE (U series) 600V / 100A Features · Low V (sat) CE · Compact Package · P.C. Board Mount Module Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power Supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) ...

Page 2

... I =100A Tj=125° Tj=25°C F (chip) Tj=125° =100A lead R T=25°C T=100°C B T=25/50°C Symbol Condition IGBT Rth(j-c) FWD Rth(c-f) With thermal compound 27,28,29 24,25, 6MBI100U2B-060 Characteristics Unit Min. Typ. Max 1 200 nA V 6.2 6.7 7 2.20 2. 0.40 1.20 µs - ...

Page 3

... Cies 300 Cres 200 Coes 100 6MBI100U2B-060 Tj= 125°C / chip VGE=20V 15V 12V Collector-Emitter voltage : VCE [V] Tj=25°C / chip Ic=200A Ic=100A Ic= 50A Gate - Emitter voltage : VGE [ V ] Dynamic Gate charge (typ.) Vcc=300V, Ic=100A, Tj= 25° ...

Page 4

... RG >= 33 250 Eon 200 150 100 Eoff 50 Err 0 1000.0 0 6MBI100U2B-060 Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=33 , Tj=125°C ton toff 100 150 Collector current : Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=33 Eon(125° ...

Page 5

... FWD IGBT 1 0.1 0.100 1.000 -60 -40 -20 0 6MBI100U2B-060 Reverse recovery characteristics (typ.) Vcc=300V, VGE=±15V, Rg=33 Irr (125°C) Irr (25°C) Irr (125°C) Irr (25° 100 150 Forward current : Temperature characteristic (typ 100 120 140 160 180 Temperature [° ...

Page 6

... IGBT Module Outline Drawings, mm 6MBI100U2B-060 ( ) shows reference dimension. ...

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