6MBI50U4A-120 Fuji Electric holdings CO.,Ltd, 6MBI50U4A-120 Datasheet
6MBI50U4A-120
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6MBI50U4A-120 Summary of contents
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... SPECIFICATION Device Name : Type Name : Spec. No. : S.Miyashita Jan. 18 ’05 Y.Seki Jan. 18 ’05 T.Miyasaka K.Yamada IGBT MODULE 6MBI50U4A-120 MS5F 6015 MS5F6015 H04-004-07b ...
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Classi- Date Ind. fication Enactment Jan.-18 -’05 Revised characteristics a Revision Oct.-25-’ Applied Content Drawn date Issued date S.Miyashita VF (P4/13) MS5F6015 Checked Checked Approved T.Miyasaka ...
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... Outline Drawing ( Unit : Equivalent circuit 25,26 25, 23 27,28 27,28 6MBI50U4A-120 shows theoretical dimension shows reference dimension 21,22 21, MS5F6015 15 19,20 19,20 13 H04-004-03a ...
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Absolute Maximum Ratings ( at Tc= 25 Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage between thermistor and others (*2) Screw Mounting (*3) Torque (*1) ...
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... Indication on module Logo of production 6MBI50U4A-120 Lot.No. 7. Applicable category This specification is applied to IGBT-Module named 6MBI50U4A-120. 8. Storage and transportation notes • The module should be stored at a standard temperature Store modules in a place with few temperature changes in order to avoid condensation on the • ...
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Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
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Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...
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Reliability Test Results Test cate- Test items gorie s 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 5 Solderabitlity 6 Resistance to Soldering Heat 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage ...
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Collector current vs. Collector-Emitter voltage (typ.) o Tj= chip 125 VGE=20V 12V 15V 100 Collector-Emitter voltage : VCE [ V ] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip ...
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Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, RG=22Ω, Tj=25 10000 1000 toff ton 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=50A, VGE=±15V, Tj=25 10000 ton 1000 ...
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Forward current vs. Forward on voltage (typ.) chip 125 100 o Tj=25 C Tj=125 Forward on voltage : Transient thermal resistance (max.) 1.00 0.10 0.01 0.001 0.010 0.100 Pulse ...
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This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. If Printed Circuit Board is not suitable, the main pin terminals may have higher ...
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Never add the excessive mechanical stress to the main or control terminals when the product is applied to equipments. The module structure may be broken. 素子を装置に実装する際に、主端子や制御端子に過大な応力を与えないで下さい。端子構造が破壊する可能性があります。 case of insufficient -VGE, erroneous turn-on of IGBT may occur. -VGE ...