7MBR75SB060 Fuji Electric holdings CO.,Ltd, 7MBR75SB060 Datasheet

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7MBR75SB060

Manufacturer Part Number
7MBR75SB060
Description
Igbt Module S Series 600v / 75a / Pim
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.7MBR75SB060.pdf (7 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
7MBR75SB060
Manufacturer:
FUJI
Quantity:
24
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
7MBR75SB060
Quantity:
50
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
7MBR75SB060-03
Manufacturer:
FUJI
Quantity:
492
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
7MBR75SB060B
Manufacturer:
FAIRCHILD
Quantity:
134
7MBR75SB060
IGBT MODULE (S series)
600V / 75A / PIM
· Low V
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Item
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage
Mounting screw torque
Absolute maximum ratings (Tc=25°C unless without specified)
should be connected together and shorted to copper base.
Features
Applications
Maximum ratings and characteristics
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I
2
t
CE
(sat)
between thermistor and others *3
(Non-Repetitive)
Symbol
V
V
I
I
-I
P
V
V
I
I
P
V
V
I
I
I
T
T
V
C
CP
C
CP
O
FSM
2
C
j
stg
CES
GES
C
CES
GES
C
RRM
RRM
t
iso
Condition
Continuous
1ms
1 device
Continuous
1ms
1 device
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
Rat ing
-40 to +125
AC 2500
AC 2500
1378
+150
600
±20
150
300
600
±20
100
200
600
800
525
75
75
50
75
3.5 *
1
IGBT Modules
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A
°C
°C
V
V
N·m
2
s

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7MBR75SB060 Summary of contents

Page 1

... IGBT MODULE (S series) 600V / 75A / PIM Features · Low V (sat) CE · Compact package · P.C. board mount · Converter diode bridge, Dynamic brake circuit Applications · Inverter for motor drive · AC and DC servo drive amplifier · Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25° ...

Page 2

... Symbol Condition Inverter IGBT Inverter FWD Rth(j-c) Brake IGBT Converter Diode With thermal compound Rth(c- 21( 23( 7MBR75SB060 Characteristics Min. Typ. =0V GE =±20V 5.5 7.8 1.8 2.1 terminal 7500 =10V, f=1MHz 0.45 0.25 0.08 0.40 0.05 1.7 chip 2 ...

Page 3

... C 500 400 Cies 300 200 Coes Cres 100 7MBR75SB060 [ Inverter ] Collector current vs. Collector-Emitter voltage o Tj= 125 C (typ.) VGE= 20V 15V Collector - Emitter voltage : VCE [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage o Tj (typ.) Ic=150A Ic= 75A Ic= 37 ...

Page 4

... Tj=125°C GE 200 Eon 150 100 Eoff 50 Err 0 100 300 ] 7MBR75SB060 [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, V =±15V, Rg=33 , Tj=125° 100 Collector current : Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, V =±15V, Rg=33 GE Eon(125 Eoff(125 Eon(25 ...

Page 5

... Tj= Tj= 125 C Tj 1.2 1.6 2.0 200 100 FWD[Inverter] Conv. Diode IGBT[Brake] 10 IGBT[Inverter] 1 0.1 0.1 1 -60 7MBR75SB060 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, V =±15V, Rg=33 GE trr(125 o trr(25 C) Irr(125 o Irr(25 50 100 Forward current : Thermistor ] Temperature characteristic (typ.) -40 - 100 120 140 ...

Page 6

... C 500 400 Cies 300 200 Coes 100 Cres 7MBR75SB060 [ Brake ] Collector current vs. Collector-Emitter voltage o Tj= 125 C (typ.) 15V 12V VGE= 20V 10V Collector - Emitter voltage : VCE [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage o Tj (typ.) ...

Page 7

... IGBT Modules Outline Drawings, mm 8-R2.25 0.3 4-ø5.5 0.3 13.09 4.055 14.995 M712 1 122 0.3 110 0.3 94.5 15.24 19.05 19.05 15. 3.81 0.3 99.6 3. 15.24 15.24 15.24 15.24 0.2 1.15 ø0.4 7MBR75SB060 +0.5 3.81 4=15.24 11 15.24 22.86 ø2.5 0.1 0.1 ø2.1 Section A-A Shows theory dimensions ...

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