7MBP75RTB060 Fuji Electric holdings CO.,Ltd, 7MBP75RTB060 Datasheet

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7MBP75RTB060

Manufacturer Part Number
7MBP75RTB060
Description
Igbt - Ipm
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.7MBP75RTB060.pdf (9 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
7MBP75RTB060
Manufacturer:
FUJI
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
7MBP75RTB060
Quantity:
50
7MBP75RTB060
IPM-R3 series
Item
Bus voltage
Collector-Emitter voltage
Input voltage of power supply for Pre-Driver
Input signal voltage
Input signal current
Alarm signal voltage
Alarm signal current
Junction temperature
Operating case temperature
Storage temperature
Isolating voltage (Case-Terminal)
Screw torque
Note
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB,
*2 : 125
*3 :
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.
*6 : V
*7 : I
*8 : 50Hz/60Hz sine wave 1 minute.
*9 : Recommendable Value : 2.5 to 3.0 N·m
*9 : (For 1 device, Case is under the device)
· Temperature protection provided by directly detecting the junction
· Low power loss and soft switching
· High performance and high reliability IGBT with overheating protection
· Higher reliability because of a big decrease in number of parts in
(between terminal P and N)
Weight
temperature of the IGBTs
built-in control circuit
Weight
Absolute maximum ratings(at Tc=25°C unless otherwise specified)
N and U or V or W or DB.
Pc=125
ALM
Features
Maximum ratings and characteristics
Pc=125
ALM
Collector current
Collector power dissipation
Collector current
Collector power dissipation
Forward Current of Diode
°C/FWD Rth(j-c)/(Ic x V
shall be applied to the input current to terminal No. 16.
shall be spplied to the voltage between terminal No. 16 and 10.
Item
°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]
°C/IGBT Rth(j-c)=125/0.63=198W [Break]
F
MAX)=125/0.855/(75 x 2.6)x100=75.0%
Terminal (M5)
Mounting (M5)
DC
Surge
Shortoperating
1ms
One transistor
1ms
One transistor
Duty=75.0%
DC
DC
Symbol
V
V
V
V
I
I
-I
P
I
I
I
P
V
V
I
V
I
T
T
T
V
F
C
CP
C
CP
in
ALM *7
op
stg
C
j
DC
DC(surge)
CES *1
C
C
CC *4
in
ALM *6
iso *8
SC
*5
*2
*3
*3
200
-20
-40
Min.
0
0
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.5
-0.5
-0.5
Rating
Vcc+0.5
100
198
125
450
500
400
600
150
198
150
100
Vcc
AC2.5
3.5 *
3.5 *
Max.
50
50
20
75
75
20
3
9
9
Unit
V
V
V
V
A
A
A
W
A
A
A
W
V
V
mA
V
mA
°C
°C
°C
kV
N·m
N·m
Symbol
Wt
600V / 75A 7 in one-package
Fig.1 Measurement of case temperature
Min.
-
Typ.
450
Max.
-
Unit
g

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7MBP75RTB060 Summary of contents

Page 1

... IPM-R3 series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss and soft switching · High performance and high reliability IGBT with overheating protection · Higher reliability because of a big decrease in number of parts in ...

Page 2

... Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.) Main circuit Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of Diode Turn-on time Turn-off time Reverse recovery time Maximum Avalanche Energy ...

Page 3

... Vin Ic /Vin Vge (Inside IPM) Fault (Inside IPM) /ALM Ic I ALM CT P VccU 20k DC VinU U 15V Sw1 GNDU V Vcc 20k W DC VinX 15V Sw2 N GND Earth Cooling Fin Figure 5. Noise Test Circuit on Vin(th) trr 90% 50% 90% ton Figure 1. Switching Time Waveform Definitions ...

Page 4

... Block diagram VccU 3 VinU 2 GNDU 1 VccV 6 VinV 5 GNDV 4 VccW 9 VinW 8 GNDW 7 Vcc 11 VinX 13 GND 10 VinY 14 VinZ 15 VinDB 12 R ALM Over heating protection ALM 16 circuit 1.5k Outline drawings, mm Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver Pre-Driver IGBT-IPM Pre-driver include following functions ...

Page 5

... Characteristics Control circuit characteristics (Respresentative) Power supply current vs. Switching frequency Tc=125° Switching frequency fsw (kHz) Under voltage vs. Junction temperature Junction temperature Tj ( Alarm hold time vs. Power supply voltage 3.0 2.5 2.0 1.5 1.0 0 ...

Page 6

... Main circuit characteristics (Respresentative) Collector current vs. Collector-Emitter voltage Tj=25°C(Chip 0.5 1 1.5 Collector-Emitter voltage V Collector current vs. Collector-Emitter voltage Tj=125°C(Chip 0.5 1 1.5 Collector-Emitter voltage V Forward current vs. Forward voltage (Chip) 150 100 0.5 1 1.5 Foeward voltage V ...

Page 7

... Switching Loss vs. Collector current Edc=300V, Vcc=15V, Tj=25° Collector current I Reverse biased safe operating area < Vcc=15V, Tj 125°C = 300 250 200 150 100 100 200 300 400 Collector-Emitter voltage V Power derating for IGBT (per device) ...

Page 8

... Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=25°C 10000 1000 100 Collector current Ic ( Reverse recovery characteristics trr, Irr, vs. I 100 Foeward current I 10000 1000 100 80 100 120 100 120 (A) F Switching time vs. Collector current Edc=300V, Vcc=15V, Tj=125°C ...

Page 9

... Dynamic brake characteristics (Respresentative) Collector current vs. Collector-Emitter voltage Tj=25°C (Terminal 0.5 1 1.5 Collector-Emitter voltage V Transient thermal resistance 1 0.1 0.01 0.001 0.01 Pulse width Pw (sec.) Power derating for IGBT (per device) 250 200 1 50 100 Case temperature 2 0 ...

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