VP0645 Supertex, Inc., VP0645 Datasheet

VP0645

Manufacturer Part Number

VP0645

Description

P-channel Enhancement-mode Vertical Dmos Fets

Manufacturer

Supertex, Inc.

Datasheet

1.VP0645.pdf (4 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

VP06452-3

Manufacturer:

VLSI

Quantity:

12 388

Current page: 1 of 4
Download datasheet (61Kb)

Ordering Information

†

High Reliability Devices

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

Features

■ ■

Applications

■ ■

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

Operating and Storage Temperature

Soldering Temperature*

Distance of 1.6 mm from case for 10 seconds.

MIL visual screening available

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

-450V

-500V

DSS

DGS

ISS

and fast switching speeds

(max)

DS(ON)

30Ω

P-Channel Enhancement-Mode

Vertical DMOS FETs

(min)

-0.2A

D(ON)

-55°C to +150°C

300°C

± 20V

DGS

DSS

VP0645N2

TO-39

7-245

—

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Package Options

Note: See Package Outline section for dimensions.

Case: DRAIN

VP0650N3

TO-39

D G S

TO-92

Order Number / Package

—

TAB: DRAIN

VP0650N5

TO-220

G D

—

VP0645

VP0650

VP0645ND

VP0650ND

TO-92

S G D

Die

†

Related parts for VP0645

VP0645 Summary of contents

Page 1

... Package Options BV DSS TO-39 DGS Case: DRAIN ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 7-245 VP0645 VP0650 TO-220 Die — — VP0645ND VP0650N5 VP0650ND TO-220 TAB: DRAIN TO-92 † ...

Page 2

... PULSE GENERATOR t (OFF d(OFF) F 90% 10% 7-246 VP0645/VP0650 θ θ ° ° C/W C/W 125 170 -0.1A 21 125 -0.25A 2.7 70 -0.25A Unit Conditions 0V -2mA -2mA ...

Page 3

... T = -55° 25° 125° -0.4 -0.5 1.0 0.8 0.6 0.4 0.2 0 -1000 0.001 7-247 VP0645/VP0650 Saturation Characteristics -10V -6V - (volts) DS Power Dissipation vs. Case Temperature TO-220 TO-39 TO- 100 125 T (°C) C Thermal Response Characteristics TO-220 P = 45W ...

Page 4

... On-Resistance vs. Drain Current -10V -0.2 -0.4 -0.6 -0.8 I (amperes and R Variation with Temperature (th -10V, -0.1A DS(ON -2mA (th) - 100 T (°C) j Gate Drive Dynamic Characteristics V = -10V -40V DS 250 0.5 1.0 1.5 2.0 Q (nanocoulombs) G VP0645/VP0650 -1.0 2.0 1.0 0 150 2.5 ...

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