DN1590 Supertex, Inc., DN1590 Datasheet

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DN1590

Manufacturer Part Number
DN1590
Description
N-channel Depletion-mode Vertical Dmos Fet - Supertex, Inc
Manufacturer
Supertex, Inc.
Datasheet
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Note 1. Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain to source voltage
Drain to gate voltage
Gate to source voltage
Operating and storage temperature
Soldering temperature
DN1509
Device
High input impedance
Low input capacitance
Fast switching speeds
Low ON-resistance
Free from secondary breakdown
Low input and output leakages
Normally-on switches
Battery operated systems
Converters
Linear amplifi ers
Constant current sources
Telecom
N-Channel Depletion-Mode Vertical DMOS FET
TO-243AA (SOT-89)
Package Option
DN1509N8-G
1
-55°C to +150°C
BV
DSX
90V
/BV
+300°C
DGX
Value
BV
BV
±20V
DGX
DSX
R
DS(ON)
6.0
General Description
The Supertex DN1509 is suitable for high voltage transient
protection for LDO in automobile applications during “load
dump” conditions.
This
transistor utilizes an advanced vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors and
with the high input impedance and positive temperature
coeffi cient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway
and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Pin Confi guration
(max)
low
I
540mA
DSS
threshold,
(typ)
TO-243AA (SOT-89)
G
(Top View)
where
depletion-mode
Product marking for TO-243AA:
D
D
= 2-week alpha date code
S
DN5A
DN1509
(normally-on)

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DN1590 Summary of contents

Page 1

N-Channel Depletion-Mode Vertical DMOS FET Features ► High input impedance ► Low input capacitance ► Fast switching speeds ► Low ON-resistance ► Free from secondary breakdown ► Low input and output leakages Applications ► Normally-on switches ► Battery operated systems ...

Page 2

Electrical Characteristics Symbol Parameter BV Drain-to-source breakdown voltage DSX V Gate-to-source OFF voltage GS(OFF change with temperature GS(OFF) GS(OFF) I Gate body leakage GSS I Drain-to-source leakage current D(OFF) I Saturated drain-to-source current DSS R Static drain-to-source ON-state ...

Page 3

TO-243AA (SOT-89) Package Outline (N8) 4.50 ± 0.10 1.72 ± 0.10 4.10 ± 0.15 2.45 ± 0.15 1.05 ± 0.15 0.42 ± 0.06 1.50 BSC 3.00 BSC Top View (The package drawing(s) in this data sheet may not refl ect ...

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