NT14N03R ON Semiconductor, NT14N03R Datasheet

NT14N03R

Manufacturer Part Number

NT14N03R

Description

Power Mosfet 14 A, 25 V N-channel Dpak

Manufacturer

ON Semiconductor

Datasheet

1.NT14N03R.pdf (6 pages)

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NTD14N03R

Power MOSFET

14 Amps, 25 Volts

N-Channel DPAK

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 0.5 sq. in pad size.

2. When surface mounted to an FR4 board using minimum recommended pad

October, 2007 - Rev. 5

MAXIMUM RATINGS

Drain-to-Source Voltage

Gate-to-Source Voltage - Continuous

Thermal Resistance - Junction-to-Case

Total Power Dissipation @ T

Drain Current - Continuous @ T

- Continuous @ T

- Single Pulse (tp ≤ 10 ms)

Thermal Resistance, Junction-to-Ambient

(Note 1)

Thermal Resistance, Junction-to-Ambient

(Note 2)

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

High-Efficiency DC-DC Converters

Planar HD3e Process for Fast Switching Performance

Low R

Low C

Low Gate Charge

Optimized for High Side Switching Requirements in

Pb-Free Packages are Available

size.

Total Power Dissipation @ T

Drain Current - Continuous @ T

Total Power Dissipation @ T

Drain Current - Continuous @ T

DS(on)

iss

to Minimize Driver Loss

to Minimize Conduction Loss

Parameter

= 25°C, Limited by Package

= 25°C unless otherwise specified)

= 25°C

= 25°C, Chip

= 25°C

Symbol

DSS

, T

qJC

qJA

stg

-55 to

Value

20.8

11.4

1.56

1.04

±20

120

150

260

6.0

3.1

2.5

°C/W

Unit

Vdc

°C

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Gate

14N03 = Device Code

(Surface Mount)

1 2

CASE 369C

14 AMPERES, 25 VOLTS

STYLE 2

4 Drain

DPAK

Drain

DS(on)

ORDERING INFORMATION

= Year

= Work Week

= Pb-Free Package

& PIN ASSIGNMENTS

MARKING DIAGRAM

http://onsemi.com

Source

= 70.4 mW (Typ)

N-CHANNEL

Publication Order Number:

Gate

(Straight Lead)

CASE 369D

STYLE 2

DPAK-3

4 Drain

Drain

NTD14N03R/D

Source

Related parts for NT14N03R

NT14N03R Summary of contents

Page 1

NTD14N03R Power MOSFET 14 Amps, 25 Volts N-Channel DPAK Features • Planar HD3e Process for Fast Switching Performance • Low R to Minimize Conduction Loss DS(on) • Low C to Minimize Driver Loss iss • Low Gate Charge • Optimized ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On-Region Characteristics 0. 0.16 0. ...

Page 4

iss 160 C rss 120 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 V = ...

Page 5

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTD14N03R PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O SEATING -T- PLANE SOLDERING FOOTPRINT* 6 ...

Page 6

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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