NT14N03R ON Semiconductor, NT14N03R Datasheet - Page 2

• Manufacturer Part Number: NT14N03R
• Description: Power Mosfet 14 A, 25 V N-channel Dpak
• Manufacturer: ON Semiconductor

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE-DRAIN DIODE CHARACTERISTICS
Drain-to-Source Breakdown Voltage (Note 3)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage (Note 3)
Threshold Temperature Coefficient (Negative)
Static Drain-to-Source On-Resistance (Note 3)
Forward Transconductance (Note 3)
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
GS
DS
GS
GS
DS
= 0 Vdc, I
= 20 Vdc, V
= 20 Vdc, V
= V
= 10 Vdc, I
= ±20 Vdc, V
= 4.5 Vdc, I
= 10 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
= 250 mAdc)
D
GS
GS
= 5 Adc)
= 5 Adc)
DS
= 5 Adc)
Characteristics
= 0 Vdc)
= 0 Vdc, T
= 0 Vdc)
(I
(V
S
(I
DS
S
= 5 Adc, V
J
(T
(V
= 5 Adc, V
= 150°C)
J
= 20 Vdc, V
dI
GS
(V
(I
= 25°C unless otherwise specified)
V
S
S
I
GS
D
/dt = 100 A/ms) (Note 3)
DS
= 10 Vdc, V
= 5 Adc, V
= 5 Adc, R
= 5 Vdc, I
= 10 Vdc) (Note 3)
GS
GS
= 0 Vdc, T
GS
= 0 Vdc) (Note 3)
http://onsemi.com
GS
= 0 V, f = 1 MHz)
DD
G
D
NTD14N03R
= 5 Adc,
= 0 Vdc,
= 3 W)
= 10 Vdc,
J
= 125°C)
2
V(br)
Symbol
R
V
t
t
I
I
C
Q
DS(on)
C
V
GS(th)
C
d(on)
d(off)
g
DSS
GSS
Q
Q
Q
t
t
t
FS
oss
t
t
SD
iss
rss
rr
RR
a
b
r
f
T
1
2
DSS
Min
1.0
25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.002
70.4
0.93
0.82
4.75
1.88
Typ
117
115
1.5
7.0
3.8
9.6
2.0
1.8
0.8
0.7
6.6
28
62
33
27
-
-
-
-
-
±100
Max
130
1.0
2.0
1.2
10
95
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
V dc
mW
pF
nC
mC
ns
ns