RT3NDDM ISAHAYA ELECTRONICS CORPORRATION, RT3NDDM Datasheet
RT3NDDM
Related parts for RT3NDDM
RT3NDDM Summary of contents
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... PRELIMINARY DESCRIPTION RT3NDDM is a composite transistor built with two RT1N237 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Built in bias resistor (R1=2.2kΩ,R2=47kΩ) Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit MAXIMUM RATING (Ta=25 ℃ ...
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... =10mA,I =0.5mA =0.2V,I =5mA =5V,I =100μ =6V,I =-10mA CE E 1000 100 10 100 1 1.6 2.0 RT3NDDM Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type Limits Min Typ Max 0.1 - 0.7 0.5 0.6 1.5 2 200 DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT VCE=5V 10 100 COLLECTOR CURRENT IC(mA) ...
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Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...