RT3AMMM ISAHAYA ELECTRONICS CORPORRATION, RT3AMMM Datasheet - Page 2

• Manufacturer Part Number: RT3AMMM
• Description: Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25℃)
V
I
I
h
h
V
f
C
NF
T
CBO
EBO
* : It shows h
FE
FE
(BR)CEO
CE(sat)
ob
Symbol
*
FE
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain band width product
Collector output capacitance
Noise figure
classification in right table.
Parameter
ISAHAYA ELECTRONICS CORPORATION
I
V
V
V
V
I
V
V
V
C
C
CB
EB
CE
CE
CE
CB
CE
=100μA,R
=-100mA,I
=-6V,I
=-6V,I
=-6V,I
=-6V,I
=-6V,I
=6V,I
=-60V,I
E
C
C
C
E
E
=0.3mA,f=100H
=0
=-1mA
=-0.1mA
=10mA
=0,f=1MH
E
Test conditions
B
BE
=0
=-10mA
=∞
Z
Z
,R
G
=10kΩ
For Low Frequency Amplify Application
item
h
FE
Min
150
-50
90
-
-
-
-
-
-
Silicon Pnp Epitaxial Type
RT3AMMM
150～300
Composite Transistor
Limits
Typ
200
4.0
E
-
-
-
-
-
-
-
Max
-0.1
-0.1
-0.3
500
20
250～500
-
-
-
-
F
MH
Unit
μA
μA
pF
dB
V
V
-
-
Z