RT3T66M ISAHAYA ELECTRONICS CORPORRATION, RT3T66M Datasheet - Page 2

• Manufacturer Part Number: RT3T66M
• Description: Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25 ℃)
TYPICAL CHARACTERISTICS
V
I
h
V
R
f
T
CBO
FE
(BR)CEO
CE(sat)
1
Symbol
1000
1000
100
100
10
10
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input resistor
Gain band width product
0.1
0
V
V
CE
CE
=5V
=5V
DC forward gain current - Collector current
0.2
Collector current -Input off voltage
0.4
Input off voltage VI(OFF) (V)
0.6
Collector current Ic(mA)
Parameter
1
0.8
ISAHAYA ELECTRONICS CORPORATION
1
1.2
10
1.4
1.6
1.8
100
I
V
V
I
-
V
2
C
C
CB
CE
CE
=-100μA,R
=-10mA,I
=-5V,I
=-6V,I
=-50V,I
C
E
0.1
10
1
=-1mA
=10mA
E
B
0.1
Test conditions
=0
=-0.5mA
BE
V
CE
=∞
=0.2V
Input on voltage - Collector current
Collector current Ic (mA)
1
Composite Transistor With Resistor
10
Min
100
3.3
50
-
-
-
For Switching Application
RT3T66M
Silicon Epitaxial Type
Limits
Typ
150
0.1
4.7
100
-
-
-
Max
0.1
0.3
6.1
-
-
-
MH
Unit
μA
kΩ
V
V
-
Z