RT3TAAM ISAHAYA ELECTRONICS CORPORRATION, RT3TAAM Datasheet - Page 2

• Manufacturer Part Number: RT3TAAM
• Description: Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type
• Manufacturer: ISAHAYA ELECTRONICS CORPORRATION

PRELIMINARY
ELECTRICAL CHARACTERISTICS (Ta=25℃)
TYPICAL CHARACTERISTICS ( Tr1 )
V
I
h
V
V
V
R
R
f
T
CBO
FE
1000
(BR)CEO
CE(sat)
I(ON)
I(OFF)
1
2
Symbol
/R
100
10
1
0.1
10
1
0
1
V
V
CE
INPUT OFF VOLTAG E Ｖ
Collector to Emitter break down voltage
Collector cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
CE
=5V
COLLECTOR CURRENT Ｉ
0.4
=0.2V
VS.COLLECTOR CURRENT
VS.INPUT OFF VOLTAGE
COLLECTOR CURRENT
INPUT ON VOLTAGE
0.8
Parameter
10
1.2
Ｉ（ＯＦ Ｆ ）
ISAHAYA ELECTRONICS CORPORATION
Ｃ
（ｍ Ａ）
1.6
（Ｖ）
100
2
I
V
V
I
V
V
-
-
V
C
C
CB
CE
CE
CE
CE
=100μA,R
=5mA,I
1000
100
=5V,I
=0.2V,I
=5V,I
=6V,I
=50V,I
10
1
C
C
E
B
=5mA
=100μA
=10mA
E
=0.25mA
C
V
Test conditions
=0
=5mA
BE
CE
=5V
=∞
COLLECTOR CURRENT Ｉ
DC FORWARD CURRENT GAIN
VS.COLLECTOR CURRENT
10
Tr1
Tr2
Composite Transistor With Resistor
Ｃ
（ｍ Ａ）
Min
0.8
0.8
50
82
70
-
-
-
-
-
For Switching Application
RT3TAAM
Silicon Epitaxial Type
100
Limits
Typ
100
200
150
0.1
2.4
1.1
1.0
-
-
-
Max
130
1.2
0.1
0.3
8.8
-
-
-
-
-
MH
Unit
μA
kΩ
V
V
V
V
-
-
Z