TIM5053-4SL TOSHIBA Semiconductor CORPORATION, TIM5053-4SL Datasheet
TIM5053-4SL
Manufacturer Part Number
TIM5053-4SL
Description
Microwave Power Gaas Fet
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TIM5053-4SL.pdf
(4 pages)
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Company:
Part Number:
TIM5053-4SL
Manufacturer:
TOSHIBA
Quantity:
5 000
Part Number:
TIM5053-4SL
Manufacturer:
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u The information contained herein is presented only as a guide for the applications of our products. No responsibility is
MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
n LOW INTERMODULATION DISTORTION
n HIGH POWER
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
Output Power at 1dB Gain
Compression Point
Power Gain at 1dB Gain
Compression Point
Drain Current
Gain Flatness
Power Added Efficiency
3
Distortion
Drain Current
Channel Temperature Rise
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown
Voltage
Thermal Resistance
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
FEATURES
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Recommended Gate Resistance(Rg) : 150
rd
IM3=-45 dBc at Pout= 25.5dBm
Single Carrier Level
P1dB=36.5dBm at 5.0GHz to 5.3GHz
CHARACTERISTICS
CHARACTERISTICS
Order Intermodulation
SYMBOL
SYMBOL
R
V
V
G
P
IDS2
I
I
th(c-c)
IM3
GSoff
DS1
DSS
gm
GSO
Tch
1dB
1dB
add
G
(VDS X IDS + Pin – P1dB)
V
I
V
I
V
V
I
Channel to Case
(Single Carrier Level)
DS
DS
GS
DS
DS
DS
GS
f= 5.0 to 5.3GHz
CONDITIONS
Two-Tone Test
CONDITIONS
= 1.5A
= 15mA
= -50 A
Po=25.5dBm
= 3V
=
=
= 0V
VDS=10V
n HIGH GAIN
n BROAD BAND INTERNALLY MATCHED FET
n HERMETICALLY SEALED PACKAGE
X Rth(c-c)
3V
3V
(Max.)
G1dB=9.5dB at 5.0GHz to 5.3GHz
MICROWAVE POWER GaAs FET
TIM5053-4SL
UNIT
UNIT
dBm
dBc
C/W
mS
dB
dB
%
A
A
V
A
V
C
MIN.
35.5
MIN.
-1.0
-42
8.5
-5
TYP. MAX.
36.5
TYP. MAX.
9.5
1.1
-45
1.1
-2.5
900
36
Rev. Jul. 2006
2.6
4.5
1.3
1.3
80
-4.0
0.6
6.5
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TIM5053-4SL Summary of contents
Page 1
... SYMBOL CONDITIONS 1. GSoff 15mA DSS -50 A GSO GS R Channel to Case th(c-c) TIM5053-4SL UNIT MIN. TYP. MAX. dBm 35.5 36.5 dB 8.5 9 dBc -42 -45 A 1.1 C UNIT MIN. TYP. MAX. mS 900 V -1.0 -2 C/W 4.5 Rev. Jul. 2006 1 ...
Page 2
... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage Temperature PACKAGE OUTLINE (2-11D1B) 4-C1.2 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM5053-4SL SYMBOL ...
Page 3
... RF PERFORMANCE Output Power (Pout) vs. Frequency V =10V DS I 1.1A DS Pin=27.0dBm 5.0 Output Power(Pout) vs. Input Power(Pin) 39 freq.=5.3GHz 38 V =10V TIM5053-4SL 5.1 5.2 Frequency (GHz) Pout add 24 26 Pin(dBm ...
Page 4
... Power Dissipation vs. Case Temperature IM3 vs. Output Power Characteristics -10 V =10V DS I 1.1A DS freq.=5.3GHz -20 f=5MHz -30 -40 -50 - Pout(dBm) @Single carrier level TIM5053-4SL 80 120 160 Tc (℃ 200 29 31 ...