TIM7179-12UL TOSHIBA Semiconductor CORPORATION, TIM7179-12UL Datasheet
TIM7179-12UL
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TIM7179-12UL Summary of contents
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... No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. MICROWAVE POWER GaAs FET TIM7179-12UL n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE SYMBOL ...
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... Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc Channel Temperature Storage PACKAGE OUTLINE (2-16G1B) 4 – C1.0 (2) HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260 C. TIM7179-12UL SYMBOL ...
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... RF PERFORMANCE 44 VDS= 10V IDS 3.2A 43 Pin= 32.5dBm 6 7.5GHz VDS= 10V 42 IDS 3. TIM7179-12UL Output Power vs. Frequency 7.2 7.4 7.6 Frequency (GHz) Output Power vs. Input Power Po ηadd Pin (dBm) 3 7 ...
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... TIM7179-12UL Power Dissipation vs. Case Temperature 100 (℃) IM3 vs. Output Power Characteristics - 10V 7.5GHz f= 5MHz -30 -40 -50 - Po(dBm), Single Carrier Level 120 160 200 ...