FX6ASJ-06 Renesas Electronics Corporation., FX6ASJ-06 Datasheet - Page 3

• Manufacturer Part Number: FX6ASJ-06
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6ASJ-06
Performance Curves
Rev.2.00
–5.0
–4.0
–3.0
–2.0
–1.0
Aug 07, 2006
–
–
–
40
32
24
16
20
16
12
–
–
8
0
0
8
4
0
0
0
0
Power Dissipation Derating Curve
Tc = 25°C
Pulse Test
Output Characteristics (Typical)
Drain-Source Voltage V
Gate-Source Voltage V
Gate-Source Voltage (Typical)
Case Temperature Tc (°C)
P
D
–
1.0
–2
= 30W
On-State Voltage vs.
50
page 3 of 6
–
V
2.0
–4
–10V
GS
100
=
–
3.0
–6
–8V
Tc = 25°C
Pulse Test
150
–
GS
DS
I
–8
4.0
D
= –12A
–6A
(V)
–6V
–3A
(V)
–5V
–4V
–3V
–
200
5.0
–10
–10
–10
–10
–10
–10
0.5
0.4
0.3
0.2
0.1
–7
–5
–3
–2
–7
–5
–3
–2
–7
–5
–3
–2
–8
–6
–4
–2
–1
–10
0
2
1
0
0
–2 –3 –5–7
0
–1
Tc = 25°C
Pulse Test
Drain-Source Voltage V
Output Characteristics (Typical)
Drain-Source Voltage V
Maximum Safe Operating Area
–2
–3 –5–7
–0.4
On-State Resistance vs.
Drain Current (Typical)
–10
Drain Current I
Tc = 25°C
Single Pulse
0
–6V
–10
–2
–8V
V
–0.8
–3 –5–7
GS
0
–2
= –10V
–3 –5–7
–10
–1.2
V
GS
1
–10
–2
D
= –4V
Tc = 25°C
Pulse Test
–3 –5–7
1
(A)
–1.6
–2
DS
DS
–10V
–3 –5–7
–10
(V)
(V)
–3V
–5V
–4V
2
–2.0
–10
–2
2