FX6ASJ-2 Renesas Electronics Corporation., FX6ASJ-2 Datasheet - Page 4

• Manufacturer Part Number: FX6ASJ-2
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FX6ASJ-2
Rev.2.00
Aug 07, 2006
–20
–16
–12
–10
10
10
–8
–4
–8
–6
–4
–2
0
0
2
7
5
4
3
2
7
5
4
3
2
3
2
–3 –5–7
0
0
Transfer Characteristics (Typical)
Tch = 25°C
I
Tc = 25°C
V
Pulse Test
Gate-Source Voltage V
Drain-Source Voltage V
Drain-Source Voltage (Typical)
D
DS
= –6A
–10
Gate-Source Voltage vs.
Gate Charge Qg (nC)
= –10V
–2
Gate Charge (Typical)
4
0
–2
Capacitance vs.
–3 –5–7
page 4 of 6
–4
8
–10
1
12
–6
–2
–3 –5–7
Tch = 25°C
f = 1MHz
V
Ciss
Crss
Coss
GS
GS
DS
–80V
16
–8
= 0V
–50V
–10
V
–20V
DS
(V)
(V)
2
–2 –3
=
–10
20
10
–20
–16
–12
10
10
10
10
–8
–4
–1
0
7
5
7
5
4
3
2
7
5
4
3
2
5
3
2
7
5
3
2
1
0
2
1
–7
–7
0
–10
Switching Characteristics (Typical)
–10
Forward Transfer Admittance vs.
Source-Drain Voltage V
V
Pulse Test
T
25°C
Source-Drain Diode Forward
–1
C
GS
–1
–0.4
=
Characteristics (Typical)
Drain Current (Typical)
Drain Current I
Drain Current I
= 0V
–2 –3 –4–5 –7
–2 –3
75°C 125°C
–0.8
–5 –7
Tch = 25°C
V
V
R
–10
–10
–1.2
GS
DD
GEN
t
d(off)
t
d(on)
t
t
f
0
r
0
= –10V
= –50V
D
D
= R
V
Pulse Test
125°C
–2 –3 –4–5 –7
–2 –3
DS
(A)
(A)
GS
–1.6
75°C
SD
= –5V
= 50Ω
T
25°C
C
(V)
=
–5 –7
–2.0