FX6KMJ-2 Renesas Electronics Corporation., FX6KMJ-2 Datasheet

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FX6KMJ-2

Manufacturer Part Number
FX6KMJ-2
Description
High-speed Switching Use Pch Power Mos Fet
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FX6KMJ-2
Manufacturer:
MITSUBISHI
Quantity:
5 000
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
FX6KMJ-2
High-Speed Switching Use
Pch Power MOS FET
Features
Outline
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
Rev.1.00, Aug.20.2004, page 1 of 6
Drive voltage : 4 V
V
r
I
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 80 ns
DS(ON) (max)
D
DSS
: – 6 A
: – 100 V
Parameter
: 0.58
TO-220FN
Symbol
V
V
Tstg
Viso
Tch
I
I
I
P
DSS
GSS
I
DM
I
SM
DA
1
D
S
D
2
3
– 55 to +150
– 55 to +150
Ratings
1
–100
2000
–24
–24
2.0
–6
–6
–6
20
20
3
2
Unit
W
V
V
A
A
A
A
A
V
g
C
C
1. Gate
2. Drain
3. Source
V
V
L = 100 H
AC 1 minute,
Terminal to case
Typical value
GS
DS
= 0 V
= 0 V
REJ03G0262-0100
Conditions
Aug.20.2004
(Tc = 25°C)
Rev.1.00

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FX6KMJ-2 Summary of contents

Page 1

... FX6KMJ-2 High-Speed Switching Use Pch Power MOS FET Features Drive voltage : – 100 V DSS r : 0.58 DS(ON) (max – Recovery Time of the Integrated Fast Recovery Diode (TYP Outline TO-220FN Applications Motor control, lamp control, solenoid control, DC-DC converters, etc. Maximum Ratings Parameter ...

Page 2

... FX6KMJ-2 Electrical Characteristics Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...

Page 3

... FX6KMJ-2 Performance Curves Drain Power Dissipation Derating Curve 100 Case Temperature Tc (°C) Output Characteristics (Typical) – –10V – 5V – 8 – 4V – 6 – – – 4 – 8 Drain-Source Voltage V On-State Voltage vs. Gate-Source Voltage (Typical) –20 –16 – ...

Page 4

... FX6KMJ-2 Transfer Characteristics (Typical) – 25° –10V DS Pulse Test –16 –12 – 8 – – 2 – 4 Gate-Source Voltage V Capacitance vs. Drain-Source Voltage (Typical –10 –10 –3 –5–7 –2 –3 –5–7 Drain-Source Voltage V Gate-Source Voltage vs ...

Page 5

... FX6KMJ-2 On-State Resistance vs. Channel Temperature (Typical –10V 1 Pulse Test –1 – 100 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) 1 –1mA D 1.2 1.0 0.8 0.6 0.4 – 100 Channel Temperature Tch (°C) ...

Page 6

... Note : Please confirm the specification about the shipping in detail. Rev.1.00, Aug.20.2004, page Lead Material 2.0 Cu alloy 2.8 ± 0.2 0.75 ± 0.15 Quantity Standard order code 50 Type name 50 Type name – Lead forming code Dimension in Millimeters Symbol Min Typ Max Standard order code example FX6KMJ-2 FX6KMJ-2-A8 ...

Page 7

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...

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