APTGS50X170TE3G Microsemi Corporation, APTGS50X170TE3G Datasheet - Page 2

• Manufacturer Part Number: APTGS50X170TE3G
• Description: 3 Phase Bridge Npt Igbt Power Module
• Manufacturer: Microsemi Corporation

Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Temperature sensor NTC
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
BV
V
V
B
T
T
T
T
I
I
C
E
CE(on)
R
GE(th)
V
Q
CES
GES
T
d(off)
T
T
d(off)
T
E
d(on)
d(on)
25/50
off
ies
25
CES
F
rr
r
f
r
f
r
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn off Energy
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Resistance @ 25°C
T
25
= 298.16 K
R
T
=
exp
B
25
APT website – http://www.advancedpower.com
/
50
R
25
T
1
25
−
T
1
All ratings @ T
T: Thermistor temperature
R
Test Conditions
I
V
I
V
di/dt =750A/µs
I
V
di/dt =750A/µs
Test Conditions
V
V
V
V
I
V
V
Test Conditions
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
T
C
C
C
F
F
F
: Thermistor value at T
G
G
GE
GE
CE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
R
R
= 50A
= 50A
= 50A
= 50A
= 50A
= 50A
= 30Ω
= 30Ω
= 900V
= 900V
= 1700V
= 0V
= 0V, I
= 0V
=15V
= V
= 20V, V
= 0V, V
= 15V
= 15V
= 900V
= 900V
CE
, I
C
CE
= 1mA
C
CE
= 2.5 mA
= 25V
= 0V
j
T
T
T
T
T
T
T
T
T
T
= 25°C unless otherwise specified
APTGS50X170TE3
j
j
j
j
j
j
j
j
j
j
= 25°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
Min
1700
Min
Min
Min
4.5
3375
3500
0.02
14.5
Typ
Typ
Typ
Typ
100
100
800
100
100
900
2.2
2.0
1.5
2.7
3.2
12
30
30
5
2
4
6
Max
Max
Max
Max
100
2.6
0.1
3.3
6.5
Unit
Unit
Unit
Unit
mA
mJ
µC
kΩ
nA
mJ
pF
ns
ns
V
K
V
V
V
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