APTGF50X120E3G Microsemi Corporation, APTGF50X120E3G Datasheet - Page 2

• Manufacturer Part Number: APTGF50X120E3G
• Description: 3 Phase Bridge - Igbt 3 Phase Bridge V Ces = 1200v I C = 50a @ Tc = 80? Npt Igbt Power Module
• Manufacturer: Microsemi Corporation

Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
BV
V
V
V
T
T
R
T
I
I
C
C
C
CE(on)
Wt
GE(th)
V
Q
T
CES
GES
T
d(off)
T
T
d(on)
t
ISOL
STG
thJC
oes
res
rr
ies
CES
C
F
rr
J
r
f
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
APT website – http://www.advancedpower.com
All ratings @ T
Test Conditions
I
V
I
V
di/dt =800A/µs
I
V
di/dt =800A/µs
To Heatsink
Test Conditions
V
V
V
V
I
V
V
Test Conditions
V
V
f = 1MHz
Inductive Switching (125°C)
V
V
I
R
C
C
F
F
F
G
GE
GE
CE
GE
GE
GE
GE
CE
GE
Bus
GE
R
R
= 50A
= 50A
= 50A
= 50A
= 50A
= 22Ω
= 600V
= 600V
= 1200V
= 25V
= 0V
= 0V, I
= 0V
=15V
= V
= 20V, V
= 0V
= 15V
= 600V
CE
, I
C
= 3mA
C
CE
= 2 mA
= 0V
j
T
T
T
T
T
T
T
T
T
= 25°C unless otherwise specified
j
j
j
j
j
j
j
j
j
= 25°C
= 25°C
Diode
= 125°C
= 125°C
= 25°C
= 125°C
= 125°C
= 25°C
= 125°C
IGBT
M5
APTGF50X120E3
2500
Min
1200
Min
Min
Min
-40
-40
-40
2.0
4.5
3
3300
Typ
Typ
200
Typ
Typ
500
220
380
2.3
1.8
2.8
0.8
2.5
3.1
44
56
70
8
4
Max
0.35
Max
Max
Max
150
125
125
300
200
0.7
4.5
2.8
3.0
3.7
6.5
1
Unit
°C/W
Unit
N.m
Unit
Unit
mA
µC
°C
nA
pF
ns
V
ns
V
V
V
V
g
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