APTM100UM65SCAVG Microsemi Corporation, APTM100UM65SCAVG Datasheet

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APTM100UM65SCAVG

Manufacturer Part Number
APTM100UM65SCAVG
Description
Single Switch Series & Sic Parallel Diodes Mosfet Power Module
Manufacturer
Microsemi Corporation
Datasheet
G, SK and DK terminals are for control signals only
(not for power)
Series & SiC parallel diodes
MOSFET Power Module
SK
SK
DK
SK
G
APT0502 on www.microsemi.com
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
DK
Single switch
G
S
All ratings @ T
S
D
D
j
= 25°C unless otherwise specified
www.microsemi.com
APTM100UM65SCAVG
Application
Features
Benefits
V
R
I
D
DSS
DSon
= 145A @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS 7
SiC Parallel Schottky Diode
Kelvin source for easy drive
Kelvin drain for voltage monitoring
Very low stray inductance
High level of integration
AlN substrate for improved MOSFET thermal
performance
Outstanding
operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
RoHS Compliant
-
-
-
-
-
-
-
-
-
-
-
-
= 1000V
= 65mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Avalanche energy rated
Very rugged
Zero reverse recovery
Zero forward recovery
Temperature Independent switching behavior
Positive temperature coefficient on VF
Symmetrical design
M5 power connectors
M3 power connectors
DSon
®
performance
MOSFETs
at
high
frequency
1 – 8

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APTM100UM65SCAVG Summary of contents

Page 1

... G, SK and DK terminals are for control signals only (not for power All ratings @ T These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100UM65SCAVG V = 1000V DSS R = 65mΩ typ @ Tj = 25°C DSon I = 145A @ Tc = 25°C D ...

Page 2

... T Rise Time r T Turn-off Delay Time d(off) T Fall Time f E Turn-on Switching Energy on E Turn-off Switching Energy off E Turn-on Switching Energy on E Turn-off Switching Energy off APTM100UM65SCAVG Parameter T = 25° 80° 25°C c Test Conditions V = 0V,V = 1000V T = 25° 0V,V ...

Page 3

... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight APTM100UM65SCAVG Test Conditions Min 200 T = 25° =200V 125° 80°C ...

Page 4

... SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM100UM65SCAVG www.microsemi.com 4 – 8 ...

Page 5

... Drain Current DS(on) 1.4 Normalized to V =10V @ 72.5A 1.3 GS 1.2 1.1 V =10V =20V GS 0.9 0 160 I , Drain Current (A) D APTM100UM65SCAVG Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 480 250µs pulse test @ < 0.5 duty cycle 400 6.5V 320 240 6V 160 5. Drain Current vs Case Temperature ...

Page 6

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 Drain to Source Voltage (V) DS APTM100UM65SCAVG ON resistance vs Temperature 2.5 V =10V GS I =72.5A D 2.0 1.5 1.0 0.5 0.0 150 Junction Temperature (°C) J Maximum Safe Operating Area 1000 limited ...

Page 7

... DS D=50% 100 R =0.75Ω G Hard T =125° switching T =75° 115 I , Drain Current (A) D APTM100UM65SCAVG Rise and Fall times vs Current 100 V =670V DS R =0.75Ω =125°C J L=100µ 270 50 94 138 I , Drain Current (A) D Switching Energy vs Gate Resistance ...

Page 8

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100UM65SCAVG Single Pulse 0.001 ...

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