APTM100UM65SCAVG Microsemi Corporation, APTM100UM65SCAVG Datasheet - Page 2

• Manufacturer Part Number: APTM100UM65SCAVG
• Description: Single Switch Series & Sic Parallel Diodes Mosfet Power Module
• Manufacturer: Microsemi Corporation

Absolute maximum ratings
Dynamic Characteristics
Electrical Characteristics
Symbol Characteristic
Symbol Characteristic
Symbol
R
V
T
T
R
V
I
I
C
C
C
Q
E
E
DS(on)
Q
E
E
V
E
E
GS(th)
Q
I
DSS
GSS
d(off)
T
I
d(on)
T
P
I
DSon
DM
AR
oss
off
off
DSS
iss
rss
on
on
gd
AR
AS
gs
D
GS
g
r
f
D
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Parameter
Test Conditions
V
V
V
V
V
Test Conditions
V
V
f = 1MHz
V
V
I
V
V
I
R
Inductive switching @ 25°C
V
I
Inductive switching @ 125°C
V
I
D
D
D
D
GS
GS
G
GS
GS
GS
GS
DS
GS
Bus
GS
Bus
GS
GS
= 145A
= 145A
= 145A, R
= 145A, R
= 0.75Ω
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= 0V,V
= 0V,V
= 10V, I
= V
= ±30 V, V
= 0V
= 25V
= 10V
= 15V
= 15V, V
= 15V, V
= 500V
= 670V
DS
APTM100UM65SCAVG
, I
DS
DS
D
= 1000V
= 800V
G
G
D
Bus
Bus
= 20mA
= 0.75Ω
= 0.75Ω
= 72.5A
DS
= 670V
= 670V
= 0V
T
T
T
c
c
c
T
T
= 25°C
= 80°C
= 25°C
j
j
= 25°C
= 125°C
Min
Min
3
Max ratings
1000
3250
3200
1068
145
110
580
±30
28.5
5.08
Typ
136
692
78
30
50
Typ
140
0.9
2.9
3.9
2.9
4.8
55
65
18
14
±400
Max
Max
400
78
2
5
Unit
mΩ
mJ
W
V
A
V
A
Unit
Unit
mA
mΩ
µA
nA
nC
mJ
mJ
nF
ns
V
2 – 8