BAT14-03W Infineon Technologies Corporation, BAT14-03W Datasheet

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BAT14-03W

Manufacturer Part Number
BAT14-03W
Description
Silicon Schottky Diode
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BAT14-03W.pdf (3 pages)
Silicon Schottky Diode



ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
BAT14-03W
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, T
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - soldering point
1 For calculation of R
DBS mixer applications up to 12 GHz
Low noise figure
Low barrier type
thJA
please refer to Application Note Thermal Resistance
1)
S
Marking
O/white

85 °C
Pin Configuration
1 = C
1
Symbol
V
I
P
T
T
T
R
F
j
op
stg
R
tot
thJS
2 = A
1
2
-55 ... 125
-55 ... 150
Value

100
150
90
6 90
4
2
Package
SOD323
EHA07007
BAT14-03W
Jul-06-2001
1
VPS05176
Unit
V
mA
mW
°C
°C
°C
K/W

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BAT14-03W Summary of contents

Page 1

... Application Note Thermal Resistance thJA Marking Pin Configuration O/white Symbol ° tot stg R thJS 1 BAT14-03W 2 1 VPS05176 2 1 EHA07007 Package SOD323 Value 4 90 100 150 -55 ... 125 -55 ... 150 Jul-06-2001 Unit °C ° ...

Page 2

... DC characteristics (per diode) Breakdown voltage µA (BR) Forward voltage characteristics (per diode) Diode capacitance MHz R Forward resistance IF = 10mA / 50mA = 25 °C, unless otherwise specified. A Symbol V (BR BAT14-03W Values Unit min. typ. max 0.36 0.43 0.52 0.48 0.55 0.66 - 0. Jul-06-2001 ...

Page 3

... Diode capacitance 1MHz 0.50 pF 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ) Reverse current Parameter -40°C 25°C 85°C 125° 1 5 BAT14-03W = =125° 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Jul-06-2001 =85°C =25° ...

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