S1M8660AX01-F0T0 Samsung Semiconductor, Inc., S1M8660AX01-F0T0 Datasheet - Page 8

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S1M8660AX01-F0T0

Manufacturer Part Number
S1M8660AX01-F0T0
Description
Cdma/pcs/gps Triple Mode IF/ Baseband IC
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
S1M8662A (Preliminary)
AC Characteristics (Continued)
8
IF VCO pertormance
Single-tone
jammer desense
Residual
Sideband
Offset gain slope
Offset adjust
input impedance
Out-band
attenuation
Gain flatness
VCO and
buffered output
Frequency range
VCO phase noise
RXVCO_OUT
output power
Characteristic
Overall gain reduction due to one jammer.
The in-band signal at -97dBm (control the
AGC control voltage to 0.5*F/S)and the
jammer signal at 900kHz and -57dBm are
simultaneously input.
k : Linear Gain Mismatch
Amount of code change of the voltage ADC
output at the I/Q offset control
-
Amount of gain change along I and Q paths
between 1kHz to 615kHz
VCO external time constant and PLL value
Tank LC's Q value should be above 20.
Measure @100kHz away from the mid-
frequency.
Select a VCO buffer output value reduced by
-2dB. Connect output load to 50 .
RSB
: Phase Mismatch in Deg.
900kHz
1.2MHz
20
log
Test Conditions
1
1
k
k
2
2
2
2
k
k
cos
cos
Symbol
ATC12
GOFS
Jdsen
ATC9
Ovco
Fvco
Pvco
RSB
Zoff
Gft
Min
100
-15
22
46
48
-1
-
-
-
-
Typ
250
170
-
-
-
-
-
-
RX IF/BBA WITH GPS
Max
500
104
1.0
1
-
-
-
-
-
dBc/Hz
%FS/V
MHz
dBm
Unit
k
dB
dB
dB
dB
dB

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