Si7403DN Vishay Intertechnology, Si7403DN Datasheet - Page 2

• Manufacturer Part Number: Si7403DN
• Description: P-channel 20-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7403DN
Vishay Siliconix
Notes
a.
b.
www.vishay.com
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
2
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
20
16
12
8
4
0
0
b
Parameter
1
V
DS
a
a
Output Characteristics
– Drain-to-Source Voltage (V)
a
2
a
V
GS
= 4.5, 4, 3.5 V
3 V
3
_
2.5 V
1.5 V
2 V
Symbol
V
r
I
DS(on)
t
I
t
I
GS(th)
D(on)
V
Q
Q
d(off)
4
d(on)
GSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
_
5
New Product
V
I
DS
D
V
^ –1.6 A, V
DS
= –10 V, V
I
F
= –20 V, V
V
V
V
V
V
V
V
V
V
= –1.6 A, di/dt = 100 A/ms
V
DS
DS
GS
GS
I
DS
DS
S
DS
DD
DD
Test Condition
DS
= –1.6 A, V
= –5 V, V
= –5 V, V
= V
= –4.5 V, I
= –2.5 V, I
= –10 V, I
= –20 V, V
= –10 V, R
= –10 V, R
= 0 V, V
GS
GEN
GS
GS
, I
= –4.5 V, I
D
= –4.5 V, R
= 0 V, T
GS
GS
GS
D
= –250 mA
D
D
GS
GS
L
L
= –3.3 A
= –3.3 A
= –2.9 A
= –4.5 V
= –2.5 V
= "4.5 V
= 10 W
= 10 W
= 0 V
= 0 V
20
16
12
J
D
8
4
0
= 70_C
G
= –4.5 A
0
= 6 W
V
GS
Transfer Characteristics
1
–0.45
Min
– Gate-to-Source Voltage (V)
–10
–4
T
C
= –55_C
0.078
2
0.110
Typ
8.8
0.8
8.6
1.5
3.1
27
17
52
45
50
S-03390—Rev. A, 02-Apr-01
Document Number: 71431
"100
Max
0.135
–1.2
0.1
3
–1
–5
14
50
30
80
70
80
125_C
25_C
Unit
nA
m
mA
nC
ns
V
A
W
W
S
V
4