Si7444DP Vishay Intertechnology, Si7444DP Datasheet

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Si7444DP

Manufacturer Part Number

Si7444DP

Description

N-Channel 40-V (D-S) Fast Switching MOSFET

Manufacturer

Vishay Intertechnology

Datasheet

1.SI7444DP.pdf (5 pages)

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Notes

a.

Document Number: 72920

S-42058—Rev. B, 15-Nov-04

PRODUCT SUMMARY

ABSOLUTE MAXIMUM RATINGS (T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

Continuous Drain Current (T

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

Avalanche Current

Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

THERMAL RESISTANCE RATINGS

M

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

V

Surface Mounted on 1” x 1” FR4 Board.

i

DS

40

(V)

J

ti

0.0061 @ V

t A bi

r

N-Channel 40-V (D-S) Fast Switching MOSFET

DS(on)

8

6.15 mm

D

J

J

a

a

Ordering Information: Si7444DP-T1—E3

= 150_C)

= 150_C)

t

a

a

GS

7

Parameter

Parameter

(W)

D

= 10 V

6

D

a

a

PowerPAK SO-8

Bottom View

5

D

a

I

D

23.6

1

(A)

S

2

S

A

3

S

= 25_C UNLESS OTHERWISE NOTED)

Steady State

Steady State

Q

5.15 mm

T

T

T

T

t v 10 sec

4

A

A

A

A

g

G

= 25_C

= 70_C

= 25_C

= 70_C

105

(Typ)

Symbol

Symbol

T

R

R

R

V

V

J

E

I

I

P

P

, T

DM

thJC

I

I

I

AS

thJA

DS

GS

D

D

S

AS

D

D

stg

FEATURES

D TrenchFETr Power MOSFET

D New Low Thermal Resistance PowerPAKr

D 100% R

D High Threshold Voltage At High Temperature

Package with Low 1.07-mm Profile

10 secs

Typical

G

23.6

18.9

4.5

5.4

3.4

1.0

18

52

N-Channel MOSFET

g

Tested

−55 to 150

"20

100

D

S

40

60

45

Steady State

Maximum

Vishay Siliconix

11.2

1.6

1.9

1.2

1.3

14

23

65

Si7444DP

www.vishay.com

Unit

Unit

_C/W

C/W

mJ

_C

W

W

V

V

A

1

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