Si7444DP Vishay Intertechnology, Si7444DP Datasheet - Page 3

• Manufacturer Part Number: Si7444DP
• Description: N-Channel 40-V (D-S) Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 72920
S-42058—Rev. B, 15-Nov-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
0.008
0.006
0.004
0.002
0.000
10
60
10
8
6
4
2
0
1
0.0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
10
= 23.6 A
20
0.2
On-Resistance vs. Drain Current
= 20 V
V
T
J
SD
Q
= 150_C
g
I
− Source-to-Drain Voltage (V)
20
40
− Total Gate Charge (nC)
D
0.4
− Drain Current (A)
Gate Charge
30
60
0.6
40
80
0.8
V
GS
T
= 10 V
J
100
50
= 25_C
1.0
120
60
1.2
10000
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
8000
6000
4000
2000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
−25
C
V
I
D
5
oss
GS
= 23.6 A
V
V
2
= 10 V
GS
DS
T
10
J
0
− Gate-to-Source Voltage (V)
− Junction Temperature (_C)
I
− Drain-to-Source Voltage (V)
D
C
= 23.6 A
rss
Capacitance
15
25
4
Vishay Siliconix
20
50
C
iss
6
25
75
Si7444DP
100
30
www.vishay.com
8
125
35
150
10
40
3