SI7806BDN Vishay Intertechnology, SI7806BDN Datasheet
SI7806BDN
Manufacturer Part Number
SI7806BDN
Description
N-channel 30-V (d-s) Fast Switching Mosfet
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7806BDN.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7806BDN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7806BDN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 73081
S-60790-Rev. B, 08-May-06
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
V
DS
30
Ordering Information: Si7806BDN-T1-E3 (Lead (Pb)-free)
(V)
8
3.30 mm
D
7
D
0.0205 at V
N-Channel 30-V (D-S) Fast Switching MOSFET
0.0145 at V
6
D
PowerPAK 1212-8
Bottom View
5
r
DS(on)
D
J
a
= 150 °C)
a
GS
GS
(Ω)
1
= 4.5 V
= 10 V
S
2
S
a
3
S
3.30 mm
4
a
G
A
I
New Product
D
12.6
10.6
= 25 °C unless otherwise noted
Steady State
Steady State
(A)
T
T
T
T
t ≤ 10 sec
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• TrenchFET
• PWM Optimized
• New Low Thermal Resistance PowerPAK
• DC/DC Converters
Symbol
Symbol
T
R
R
J
Package with Low 1.07 mm Profile
- Secondary Synchronous Rectifier
- High-Side MOSFET in Synchronous Buck
V
V
I
P
, T
I
DM
thJA
thJC
I
DS
GS
D
S
D
stg
®
Power MOSFETS
10 secs
Typical
12.6
10.1
3.2
3.8
2.0
1.9
24
65
G
N-Channel MOSFET
- 55 to 150
± 20
30
40
Steady State
D
S
Maximum
8.0
6.4
1.3
1.5
0.8
2.4
33
81
Vishay Siliconix
Si7806BDN
www.vishay.com
®
°C/W
Unit
Unit
°C
W
V
A
RoHS
COMPLIANT
1
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