SI7806BDN Vishay Intertechnology, SI7806BDN Datasheet - Page 3

• Manufacturer Part Number: SI7806BDN
• Description: N-channel 30-V (d-s) Fast Switching Mosfet
• Manufacturer: Vishay Intertechnology

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 73081
S-60790-Rev. B, 08-May-06
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
50
10
8
6
4
2
0
1
0.0
0
0
V
V
I
Source-Drain Diode Forward Voltage
GS
D
5
DS
0.2
= 12.6 A
= 4.5 V
On-Resistance vs. Drain Current
= 15 V
4
V
SD
10
T
Q
J
g
= 150 °C
− Source-to-Drain Voltage (V)
I
0.4
D
− Total Gate Charge (nC)
Gate Charge
15
− Drain Current (A)
8
0.6
20
12
25
0.8
V
30
T
GS
J
16
= 25 °C
= 10 V
1.0
35
20
1.2
40
0.030
0.025
0.020
0.015
0.010
0.005
0.000
1400
1200
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
C
D
GS
rss
= 12.6 A
5
V
I
= 10 V
V
D
2
DS
T
GS
= 2 A
J
0
− Junction Temperature (°C)
− Drain-to-Source Voltage (V)
− Gate-to-Source Voltage (V)
10
Capacitance
25
4
I
D
C
50
Vishay Siliconix
15
= 12.6 A
oss
C
Si7806BDN
iss
6
75
20
www.vishay.com
100
8
25
125
150
30
10
3