Si7850DP Vishay Intertechnology, Si7850DP Datasheet

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Si7850DP

Manufacturer Part Number
Si7850DP
Description
N-channel 60-V (D-S) Fast Switching MOSFET
Manufacturer
Vishay Intertechnology
Datasheet

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SI7850DP
Manufacturer:
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Notes
a.
b.
Document Number: 71625
S-31727—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Continuous Source Current
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
Guaranteed by design, not subject to production testing.
i
DS
60
60
(V)
J
ti
b
t A bi
N-Channel 60-V (D-S) Fast Switching MOSFET
b
8
6.15 mm
D
Ordering Information: Si7850DP-T1
J
J
a
a
0.031 @ V
0.022 @ V
= 150_C)
= 150_C)
t
a
a
7
Parameter
Parameter
r
D
DS(on)
6
D
a
a
GS
PowerPAK SO-8
GS
Bottom View
5
(W)
= 4.5 V
= 10 V
D
1
S
2
S
A
3
S
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
5.15 mm
T
T
T
T
t v 10 sec
4
A
A
A
A
I
G
= 25_C
= 85_C
= 25_C
= 85_C
D
10.3
8.7
(A)
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
AS
D
D
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D PWM Optimized for Fast Switching
D 100% R
APPLICATIONS
D Primary Side Switch for 24-V DC/DC Applications
D Secondary Synchronous Rectifier
stg
with Low 1.07-mm Profile
g
10 secs
Typical
Tested
10.3
G
7.5
3.7
4.5
2.3
2.6
22
58
N-Channel MOSFET
-55 to 150
"20
60
40
15
11
D
S
Steady State
Maximum
Vishay Siliconix
6.2
4.5
1.5
1.8
0.9
3.3
28
70
Si7850DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1

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