Si7850DP Vishay Intertechnology, Si7850DP Datasheet - Page 3

• Manufacturer Part Number: Si7850DP
• Description: N-channel 60-V (D-S) Fast Switching MOSFET
• Manufacturer: Vishay Intertechnology

Document Number: 71625
S-31727—Rev. B, 18-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
8
6
4
2
0
50
10
1
0.00
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
On-Resistance vs. Drain Current
= 10.3 A
= 30 V
8
4
V
0.5
SD
T
Q
J
g
= 150_C
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
V
GS
- Drain Current (A)
Gate Charge
16
8
1.0
= 4.5 V
24
12
1.5
V
T
GS
J
= 25_C
= 10 V
32
16
2.0
40
20
2.5
0.06
0.05
0.04
0.03
0.02
0.01
0.00
1400
1200
1000
800
600
400
200
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-50
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
rss
-25
V
I
D
GS
10
= 10.3 A
V
2
V
GS
= 10 V
DS
T
J
0
- Gate-to-Source Voltage (V)
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
20
Capacitance
25
4
C
C
oss
iss
Vishay Siliconix
30
50
6
I
D
75
= 10.3 A
Si7850DP
40
100
www.vishay.com
8
50
125
10
150
60
3