Si7852DP Vishay Intertechnology, Si7852DP Datasheet
Si7852DP
Manufacturer Part Number
Si7852DP
Description
N-channel 80-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7852DP.pdf
(5 pages)
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SI7852DP
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Notes
a.
Document Number: 71627
S-31727—Rev. B, 18-Aug-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
80
80
(V)
J
8
ti
Ordering Information: Si7852DP-T1
6.15 mm
D
t A bi
7
D
6
D
J
J
a
a
0.0165 @ V
PowerPAK SO-8
= 150_C)
= 150_C)
t
0.022 @ V
Bottom View
a
a
5
Parameter
Parameter
D
r
DS(on)
a
a
1
GS
GS
S
(W)
N-Channel 80-V (D-S) MOSFET
= 10 V
= 6 V
2
S
a
3
S
5.15 mm
4
G
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
12.5
10.9
(A)
Symbol
Symbol
T
R
R
R
V
J
V
I
I
P
P
DM
, T
thJC
I
I
AS
I
thJA
DS
GS
D
D
S
D
D
stg
G
N-Channel MOSFET
FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
D PWM Optimized for Fast Switching
D 100% R
APPLICATIONS
D Primary Side Switch for DC/DC Applications
Package with Low 1.07-mm Profile
10 secs
D
S
Typical
12.5
10.0
4.7
5.2
3.3
1.5
19
52
g
Tested
- 55 to 150
"20
80
50
40
Steady State
Maximum
Vishay Siliconix
7.6
6.1
1.7
1.9
1.2
1.8
24
65
Si7852DP
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
1
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