Si7852DP Vishay Intertechnology, Si7852DP Datasheet - Page 2

• Manufacturer Part Number: Si7852DP
• Description: N-channel 80-V (D-S) MOSFET
• Manufacturer: Vishay Intertechnology

Si7852DP
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
50
40
30
20
10
b
0
0
Parameter
a
a
2
V
DS
a
Output Characteristics
V
- Drain-to-Source Voltage (V)
GS
a
a
J
= 10 thru 6 V
4
= 25_C UNLESS OTHERWISE NOTED)
6
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
R
t
t
SD
t
rr
fs
gs
gd
r
f
g
g
)
5 V
8
3, 4 V
10
I
V
V
D
DS
DS
^ 1.0 A, V
I
= 40 V, V
F
V
= 64 V, V
V
V
V
V
V
V
V
V
DS
= 2.8 A, di/dt = 100 A/ms
I
DS
DS
GS
Test Condition
S
DS
GS
DD
DD
DS
= 2.8 A, V
= 0 V, V
= V
w 5 V, V
= 6.0 V, I
= 64 V, V
= 10 V, I
= 15 V, I
= 40 V, R
= 40 V, R
GEN
GS
GS
GS
, I
GS
= 0 V, T
= 10 V, I
= 10 V, R
D
GS
D
GS
GS
L
L
= 250 mA
D
D
= "20 V
= 10 A
= 40 W
= 40 W
= 10 A
= 8.0 A
= 10 V
= 0 V
= 0 V
J
50
40
30
20
10
D
0
= 55_C
G
= 10 A
0
= 6 W
1
V
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
Min
2
2.0
0.1
50
T
C
3
25_C
0.0135
0.0175
= 125_C
Typ
0.75
11.0
0.85
7.5
25
34
17
40
31
45
11
S-31727—Rev. B, 18-Aug-03
Document Number: 71627
4
0.0165
Max
"100
0.022
1.1
41
25
17
60
45
75
1
5
1
5
- 55_C
Unit
nC
nA
mA
mA
ns
W
W
W
V
A
S
V
6