Si7872DP Vishay Intertechnology, Si7872DP Datasheet

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Si7872DP

Manufacturer Part Number
Si7872DP
Description
Dual N-channel 30-V (D-S) MOSFET With Schottky Diode
Manufacturer
Vishay Intertechnology
Datasheet

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Part Number:
SI7872DP
Manufacturer:
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Quantity:
500
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Notes
a.
Document Number: 72035
S-21978—Rev. A, 04-Nov-02
PRODUCT SUMMARY
SCHOTTKY PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Channel-1
Channel-2
Surface Mounted on 1” x 1” FR4 Board.
V
DS
30
(V)
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
V
8
DS
D1
6.15 mm
30
7
(V)
D1
Parameter
Diode Forward Voltage
Parameter
6
PowerPAKt SO-8
D2
J
a
Bottom View
= 150_C)
a
5
0.50 V @ 1.0 A
D2
0.030 @ V
0.028 @ V
0.022 @ V
0.022 @ V
V
_
SD
r
DS(on)
a
1
(V)
S1
GS
GS
GS
GS
2
T
T
T
T
(W)
A
A
A
A
G1
a
= 4.5 V
= 4.5 V
= 10 V
= 10 V
= 25_C
= 70_C
= 25_C
= 70_C
Steady-State
Steady-State
3
t v 10 sec
S2
5.15 mm
4
G2
A
Symbol
T
J
= 25_C UNLESS OTHERWISE NOTED)
V
V
I
P
, T
DM
I
I
GS
DS
D
S
D
Symbol
stg
I
I
New Product
F
D
R
R
3.0
10
10
(A)
8
8
(A)
thJA
thJC
Channel-1
G
"20
1
Typical
N-Channel MOSFET
10 secs
4.1
26
60
2.9
3.5
2.2
10
7
MOSFET
D
S
Channel-2
1
1
FEATURES
D LITTLE FOOT Plust Schottky
D PWM Optimized
D New Low Thermal Resistance PowerPAK
APPLICATIONS
D Asymmetrical Buck-Boost DC/DC Converter
"12
Maximum
package with low 1.07 mm profile
-55 to 150
6.0
35
85
30
30
Channel-1
G
2
"20
Typical
N-Channel MOSFET
Steady State
4.1
26
60
6.4
5.1
1.1
1.4
0.9
Schottky
Vishay Siliconix
D
S
2
2
Channel-2
"12
Maximum
Si7872DP
6.0
Schottky Diode
35
85
www.vishay.com
Unit
_C
W
V
A
Unit
_C/W
C/W
1

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