Si7872DP Vishay Intertechnology, Si7872DP Datasheet - Page 3

• Manufacturer Part Number: Si7872DP
• Description: Dual N-channel 30-V (D-S) MOSFET With Schottky Diode
• Manufacturer: Vishay Intertechnology

Document Number: 72035
S-21978—Rev. A, 04-Nov-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.040
0.030
0.020
0.010
0.000
10
30
25
20
15
10
5
0
8
6
4
2
0
0
0
0
V
I
V
D
DS
GS
5
On-Resistance vs. Drain Current
= 7.5 A
2
V
3
= 15 V
= 10 thru 5 V
DS
Output Characteristics
V
- Drain-to-Source Voltage (V)
Q
GS
10
g
I
D
= 4.5 V
- Total Gate Charge (nC)
Gate Charge
6
4
- Drain Current (A)
15
4 V
9
6
20
V
GS
3 V
= 10 V
12
8
25
10
30
15
New Product
1200
960
720
480
240
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
0
5
0
-50
0
0
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 7.5 A
C
5
rss
= 10 V
1
V
GS
T
V
0
J
Transfer Characteristics
DS
- Junction Temperature (_C)
T
- Gate-to-Source Voltage (V)
10
C
- Drain-to-Source Voltage (V)
25
= 125_C
25_C
Capacitance
MOSFET CHANNEL−1
2
Vishay Siliconix
15
50
C
C
iss
oss
3
75
20
Si7872DP
-55 _C
100
www.vishay.com
4
25
125
150
30
5
3